New mechanism of semiconductor polarization at the interface with an organic insulator

A. M. Yafyasov, V. B. Bogevolnov, E. I. Ryumtsev, A. P. Kovshik, V. Yu Mikhailovski

Research output

Abstract

A semiconductor—organic-insulator system with spatially distributed charge is created with a uniquely low density of fast surface states (Nss) at the interface. A system with Nss ≈ 5 × 1010 cm–2 is obtained for the example of n-Ge and the physical characteristics of the interface are measured for this system with liquid and metal field electrodes. For a system with an organic insulator, the range of variation of the surface potential from enrichment of the space-charge region of the semiconductor to the inversion state is first obtained without changing the mechanism of interaction between the adsorbed layer and the semiconductor surface. The effect of enhanced polarization of the space-charge region of the semiconductor occurs due to a change in the spatial structure of mobile charge in the organic dielectric layer. The system developed in the study opens up technological opportunities for the formation of a new generation of electronic devices based on organic film structures and for experimental modeling of the electronic properties of biological membranes.

Original languageEnglish
Pages (from-to)193-195
Number of pages3
JournalSemiconductors
Volume51
Issue number2
DOIs
Publication statusPublished - 1 Feb 2017
Externally publishedYes

Fingerprint

insulators
Polarization
Semiconductor materials
Electric space charge
space charge
polarization
Biological membranes
Surface potential
Beam plasma interactions
Surface states
electronics
Electronic properties
Metals
inversions
membranes
Electrodes
electrodes
Liquids
liquids
metals

Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

@article{e52c66755c634053b415185ec04a1c45,
title = "New mechanism of semiconductor polarization at the interface with an organic insulator",
abstract = "A semiconductor—organic-insulator system with spatially distributed charge is created with a uniquely low density of fast surface states (Nss) at the interface. A system with Nss ≈ 5 × 1010 cm–2 is obtained for the example of n-Ge and the physical characteristics of the interface are measured for this system with liquid and metal field electrodes. For a system with an organic insulator, the range of variation of the surface potential from enrichment of the space-charge region of the semiconductor to the inversion state is first obtained without changing the mechanism of interaction between the adsorbed layer and the semiconductor surface. The effect of enhanced polarization of the space-charge region of the semiconductor occurs due to a change in the spatial structure of mobile charge in the organic dielectric layer. The system developed in the study opens up technological opportunities for the formation of a new generation of electronic devices based on organic film structures and for experimental modeling of the electronic properties of biological membranes.",
author = "Yafyasov, {A. M.} and Bogevolnov, {V. B.} and Ryumtsev, {E. I.} and Kovshik, {A. P.} and Mikhailovski, {V. Yu}",
year = "2017",
month = "2",
day = "1",
doi = "10.1134/S1063782617020245",
language = "English",
volume = "51",
pages = "193--195",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "2",

}

New mechanism of semiconductor polarization at the interface with an organic insulator. / Yafyasov, A. M.; Bogevolnov, V. B.; Ryumtsev, E. I.; Kovshik, A. P.; Mikhailovski, V. Yu.

In: Semiconductors, Vol. 51, No. 2, 01.02.2017, p. 193-195.

Research output

TY - JOUR

T1 - New mechanism of semiconductor polarization at the interface with an organic insulator

AU - Yafyasov, A. M.

AU - Bogevolnov, V. B.

AU - Ryumtsev, E. I.

AU - Kovshik, A. P.

AU - Mikhailovski, V. Yu

PY - 2017/2/1

Y1 - 2017/2/1

N2 - A semiconductor—organic-insulator system with spatially distributed charge is created with a uniquely low density of fast surface states (Nss) at the interface. A system with Nss ≈ 5 × 1010 cm–2 is obtained for the example of n-Ge and the physical characteristics of the interface are measured for this system with liquid and metal field electrodes. For a system with an organic insulator, the range of variation of the surface potential from enrichment of the space-charge region of the semiconductor to the inversion state is first obtained without changing the mechanism of interaction between the adsorbed layer and the semiconductor surface. The effect of enhanced polarization of the space-charge region of the semiconductor occurs due to a change in the spatial structure of mobile charge in the organic dielectric layer. The system developed in the study opens up technological opportunities for the formation of a new generation of electronic devices based on organic film structures and for experimental modeling of the electronic properties of biological membranes.

AB - A semiconductor—organic-insulator system with spatially distributed charge is created with a uniquely low density of fast surface states (Nss) at the interface. A system with Nss ≈ 5 × 1010 cm–2 is obtained for the example of n-Ge and the physical characteristics of the interface are measured for this system with liquid and metal field electrodes. For a system with an organic insulator, the range of variation of the surface potential from enrichment of the space-charge region of the semiconductor to the inversion state is first obtained without changing the mechanism of interaction between the adsorbed layer and the semiconductor surface. The effect of enhanced polarization of the space-charge region of the semiconductor occurs due to a change in the spatial structure of mobile charge in the organic dielectric layer. The system developed in the study opens up technological opportunities for the formation of a new generation of electronic devices based on organic film structures and for experimental modeling of the electronic properties of biological membranes.

UR - http://www.scopus.com/inward/record.url?scp=85011835205&partnerID=8YFLogxK

U2 - 10.1134/S1063782617020245

DO - 10.1134/S1063782617020245

M3 - Article

AN - SCOPUS:85011835205

VL - 51

SP - 193

EP - 195

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -