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New luminescence band in II-VI semiconductor crystals with treated surfaces. / Verbin, S. Yu; Hellmann, R.; Baranovskii, S. D.; Ruckes, K.; Grigorev, S. R.; Novikov, B. V.; Gobel, E. O.; Thomas, P.

In: Materials Science Forum, Vol. 182-184, 01.01.1995, p. 279-282.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Verbin, SY, Hellmann, R, Baranovskii, SD, Ruckes, K, Grigorev, SR, Novikov, BV, Gobel, EO & Thomas, P 1995, 'New luminescence band in II-VI semiconductor crystals with treated surfaces', Materials Science Forum, vol. 182-184, pp. 279-282.

APA

Verbin, S. Y., Hellmann, R., Baranovskii, S. D., Ruckes, K., Grigorev, S. R., Novikov, B. V., Gobel, E. O., & Thomas, P. (1995). New luminescence band in II-VI semiconductor crystals with treated surfaces. Materials Science Forum, 182-184, 279-282.

Vancouver

Verbin SY, Hellmann R, Baranovskii SD, Ruckes K, Grigorev SR, Novikov BV et al. New luminescence band in II-VI semiconductor crystals with treated surfaces. Materials Science Forum. 1995 Jan 1;182-184:279-282.

Author

Verbin, S. Yu ; Hellmann, R. ; Baranovskii, S. D. ; Ruckes, K. ; Grigorev, S. R. ; Novikov, B. V. ; Gobel, E. O. ; Thomas, P. / New luminescence band in II-VI semiconductor crystals with treated surfaces. In: Materials Science Forum. 1995 ; Vol. 182-184. pp. 279-282.

BibTeX

@article{aa4f1ed7820348f58e6f33083d146fac,
title = "New luminescence band in II-VI semiconductor crystals with treated surfaces",
abstract = "A new luminescence band has recently been observed at low temperatures in crystals of CdS and CdSe after the treatment of a crystal surface by various electrolytes. Here we present a theory for this new band and report on its further experimental investigation. Comparison of the theoretical results with experimental data confirms that the new luminescence band can be attributed to radiative recombination of electrons and holes localized in the wells of the potential relief caused by fluctuations of the charge concentration on the crystal surface. This comparison yields a method to quantitatively characterize the density of charged impurities on the surface.",
author = "Verbin, {S. Yu} and R. Hellmann and Baranovskii, {S. D.} and K. Ruckes and Grigorev, {S. R.} and Novikov, {B. V.} and Gobel, {E. O.} and P. Thomas",
year = "1995",
month = jan,
day = "1",
language = "English",
volume = "182-184",
pages = "279--282",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications Ltd",
note = "Proceedings of the 3rd European Workshop on II-VI Compounds ; Conference date: 26-09-1994 Through 28-09-1994",

}

RIS

TY - JOUR

T1 - New luminescence band in II-VI semiconductor crystals with treated surfaces

AU - Verbin, S. Yu

AU - Hellmann, R.

AU - Baranovskii, S. D.

AU - Ruckes, K.

AU - Grigorev, S. R.

AU - Novikov, B. V.

AU - Gobel, E. O.

AU - Thomas, P.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - A new luminescence band has recently been observed at low temperatures in crystals of CdS and CdSe after the treatment of a crystal surface by various electrolytes. Here we present a theory for this new band and report on its further experimental investigation. Comparison of the theoretical results with experimental data confirms that the new luminescence band can be attributed to radiative recombination of electrons and holes localized in the wells of the potential relief caused by fluctuations of the charge concentration on the crystal surface. This comparison yields a method to quantitatively characterize the density of charged impurities on the surface.

AB - A new luminescence band has recently been observed at low temperatures in crystals of CdS and CdSe after the treatment of a crystal surface by various electrolytes. Here we present a theory for this new band and report on its further experimental investigation. Comparison of the theoretical results with experimental data confirms that the new luminescence band can be attributed to radiative recombination of electrons and holes localized in the wells of the potential relief caused by fluctuations of the charge concentration on the crystal surface. This comparison yields a method to quantitatively characterize the density of charged impurities on the surface.

UR - http://www.scopus.com/inward/record.url?scp=0029218289&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029218289

VL - 182-184

SP - 279

EP - 282

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

T2 - Proceedings of the 3rd European Workshop on II-VI Compounds

Y2 - 26 September 1994 through 28 September 1994

ER -

ID: 36131691