New luminescence band in II-VI semiconductor crystals with treated surfaces

S. Yu Verbin, R. Hellmann, S. D. Baranovskii, K. Ruckes, S. R. Grigorev, B. V. Novikov, E. O. Gobel, P. Thomas

Research outputpeer-review

Abstract

A new luminescence band has recently been observed at low temperatures in crystals of CdS and CdSe after the treatment of a crystal surface by various electrolytes. Here we present a theory for this new band and report on its further experimental investigation. Comparison of the theoretical results with experimental data confirms that the new luminescence band can be attributed to radiative recombination of electrons and holes localized in the wells of the potential relief caused by fluctuations of the charge concentration on the crystal surface. This comparison yields a method to quantitatively characterize the density of charged impurities on the surface.

Original languageEnglish
Pages (from-to)279-282
Number of pages4
JournalMaterials Science Forum
Volume182-184
Publication statusPublished - 1 Jan 1995
EventProceedings of the 3rd European Workshop on II-VI Compounds - Linz, Austria
Duration: 26 Sep 199428 Sep 1994

Scopus subject areas

  • Materials Science(all)

Cite this

Verbin, S. Y., Hellmann, R., Baranovskii, S. D., Ruckes, K., Grigorev, S. R., Novikov, B. V., ... Thomas, P. (1995). New luminescence band in II-VI semiconductor crystals with treated surfaces. Materials Science Forum, 182-184, 279-282.
Verbin, S. Yu ; Hellmann, R. ; Baranovskii, S. D. ; Ruckes, K. ; Grigorev, S. R. ; Novikov, B. V. ; Gobel, E. O. ; Thomas, P. / New luminescence band in II-VI semiconductor crystals with treated surfaces. In: Materials Science Forum. 1995 ; Vol. 182-184. pp. 279-282.
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abstract = "A new luminescence band has recently been observed at low temperatures in crystals of CdS and CdSe after the treatment of a crystal surface by various electrolytes. Here we present a theory for this new band and report on its further experimental investigation. Comparison of the theoretical results with experimental data confirms that the new luminescence band can be attributed to radiative recombination of electrons and holes localized in the wells of the potential relief caused by fluctuations of the charge concentration on the crystal surface. This comparison yields a method to quantitatively characterize the density of charged impurities on the surface.",
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Verbin, SY, Hellmann, R, Baranovskii, SD, Ruckes, K, Grigorev, SR, Novikov, BV, Gobel, EO & Thomas, P 1995, 'New luminescence band in II-VI semiconductor crystals with treated surfaces', Materials Science Forum, vol. 182-184, pp. 279-282.

New luminescence band in II-VI semiconductor crystals with treated surfaces. / Verbin, S. Yu; Hellmann, R.; Baranovskii, S. D.; Ruckes, K.; Grigorev, S. R.; Novikov, B. V.; Gobel, E. O.; Thomas, P.

In: Materials Science Forum, Vol. 182-184, 01.01.1995, p. 279-282.

Research outputpeer-review

TY - JOUR

T1 - New luminescence band in II-VI semiconductor crystals with treated surfaces

AU - Verbin, S. Yu

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AU - Baranovskii, S. D.

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AU - Grigorev, S. R.

AU - Novikov, B. V.

AU - Gobel, E. O.

AU - Thomas, P.

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N2 - A new luminescence band has recently been observed at low temperatures in crystals of CdS and CdSe after the treatment of a crystal surface by various electrolytes. Here we present a theory for this new band and report on its further experimental investigation. Comparison of the theoretical results with experimental data confirms that the new luminescence band can be attributed to radiative recombination of electrons and holes localized in the wells of the potential relief caused by fluctuations of the charge concentration on the crystal surface. This comparison yields a method to quantitatively characterize the density of charged impurities on the surface.

AB - A new luminescence band has recently been observed at low temperatures in crystals of CdS and CdSe after the treatment of a crystal surface by various electrolytes. Here we present a theory for this new band and report on its further experimental investigation. Comparison of the theoretical results with experimental data confirms that the new luminescence band can be attributed to radiative recombination of electrons and holes localized in the wells of the potential relief caused by fluctuations of the charge concentration on the crystal surface. This comparison yields a method to quantitatively characterize the density of charged impurities on the surface.

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Verbin SY, Hellmann R, Baranovskii SD, Ruckes K, Grigorev SR, Novikov BV et al. New luminescence band in II-VI semiconductor crystals with treated surfaces. Materials Science Forum. 1995 Jan 1;182-184:279-282.