Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells

E. S.  Khramtsov; B. F.  Gribakin; A. V.  Trifonov; I. V.  Ignatiev

Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells

E. S. Khramtsov, B. F. Gribakin, A. V. Trifonov, I. V. Ignatiev

Research output

Abstract

In this work, we study the exchange interactions between two excitons in the GaAs/AlGaAs quantum wells of various widths. We numerically solved the Schrödinger equation for an exciton in a quantum well to find the two-exciton wave functions and to calculate the exchange integral. The results suggest that the strongest interactions between excitons occur in the quantum wells of widths of about 40–50 nm, with the exchange energy being of about of 9 μeV for an exciton density of 1/μm2.

Original language	English
Pages (from-to)	1503-1505
Journal	Semiconductors
Volume	54
Issue number	11
Publication status	Published - 2020
Event	28th International Symposium on Nanostructures: Physics and technology - Минск Duration: 28 Sep 2020 → 2 Oct 2020 Conference number: 28 http://www.ioffe.ru/NANO2020/index.php?row=0&subrow=0&lang=en

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https://link.springer.com/article/10.1134/S1063782620110135

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@article{49bba1456ac34962a4520caa164df6fc,

title = "Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells",

abstract = "In this work, we study the exchange interactions between two excitons in the GaAs/AlGaAs quantum wells of various widths. We numerically solved the Schr{\"o}dinger equation for an exciton in a quantum well to find the two-exciton wave functions and to calculate the exchange integral. The results suggest that the strongest interactions between excitons occur in the quantum wells of widths of about 40–50 nm, with the exchange energy being of about of 9 μeV for an exciton density of 1/μm2.",

keywords = "quantum wells, exciton, exchange interaction",

author = "Khramtsov, {E. S.} and Gribakin, {B. F.} and Trifonov, {A. V.} and Ignatiev, {I. V.}",

note = "Khramtsov, E.S., Gribakin, B.F., Trifonov, A.V. et al. Modeling of Exciton Exchange Interaction in GaAs/AlGaAs Quantum Wells. Semiconductors 54, 1503–1505 (2020). https://doi.org/10.1134/S1063782620110135; null ; Conference date: 28-09-2020 Through 02-10-2020",

year = "2020",

language = "English",

volume = "54",

pages = "1503--1505",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "МАИК {"}Наука/Интерпериодика{"}",

number = "11",

url = "http://www.ioffe.ru/NANO2020/index.php?row=0&subrow=0&lang=en",

}

TY - JOUR

T1 - Modeling of exciton exchange interaction in GaAs/AlGaAs quantum wells

AU - Khramtsov, E. S.

AU - Gribakin, B. F.

AU - Trifonov, A. V.

AU - Ignatiev, I. V.

N1 - Conference code: 28

PY - 2020

Y1 - 2020

N2 - In this work, we study the exchange interactions between two excitons in the GaAs/AlGaAs quantum wells of various widths. We numerically solved the Schrödinger equation for an exciton in a quantum well to find the two-exciton wave functions and to calculate the exchange integral. The results suggest that the strongest interactions between excitons occur in the quantum wells of widths of about 40–50 nm, with the exchange energy being of about of 9 μeV for an exciton density of 1/μm2.

AB - In this work, we study the exchange interactions between two excitons in the GaAs/AlGaAs quantum wells of various widths. We numerically solved the Schrödinger equation for an exciton in a quantum well to find the two-exciton wave functions and to calculate the exchange integral. The results suggest that the strongest interactions between excitons occur in the quantum wells of widths of about 40–50 nm, with the exchange energy being of about of 9 μeV for an exciton density of 1/μm2.

KW - quantum wells

KW - exciton

KW - exchange interaction

UR - https://link.springer.com/article/10.1134/S1063782620110135

M3 - Conference article

VL - 54

SP - 1503

EP - 1505

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

Y2 - 28 September 2020 through 2 October 2020

ER -