Model for nucleation of catalyst-free III-V nanowires on patterned substrates

Y. Berdnikov, A. S. Sokolovskii, N. V. Sibirev

Research output

Abstract

Catalyst-free growth of III-V nanowires enables different optoelectronic applications though usually requires substrate patterning to control the size and position of nanowires. However, the impact of substrate modification on the nanowire nucleation is not well-understood yet. The theoretical approach of this work studies the effect of substrate boundaries and adatom diffusion on the nucleation rate of catalyst-free III-V NWs on substrates with circularly symmetric patterning. In the model results, we distinguish and demonstrate four different scenarios of nanowire nucleation, depending on the properties of the patterned and unpatterned surfaces.

Original languageEnglish
Article number012030
JournalJournal of Physics: Conference Series
Volume1482
Issue number1
DOIs
Publication statusPublished - 25 Mar 2020
Event21st Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2019 - St. Petersburg
Duration: 25 Nov 201929 Nov 2019

Scopus subject areas

  • Physics and Astronomy(all)

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