MEASUREMENT OF THE KNIGHT FIELD AND LOCAL NUCLEAR DIPOLE-DIPOLE FIELD IN AN INGAAS/GAAS QUANTUM DOT ENSEMBLE

T. Auer, R. Oulton, A. Bauschulte, D.R. Yakovlev, M. Bayer, S.Yu. Verbin, R.V. Cherbunin, D. Reuter, A.D. Wieck

Research output

12 Citations (Scopus)

Abstract

We present a comprehensive investigation of the electron-nuclear system of negatively charged InGaAs/GaAs self-assembled quantum dots (QDs) under the influence of weak external magnetic fields (up to 3 mT). We demonstrate that, in contrast to conventional semiconductor systems, these small fields have a profound influence on the electron spin dynamics, via the hyperfine interaction. QDs, with their comparatively limited number of nuclei, present electron-nuclear behavior that is unique to low-dimensional systems. We show that the conventional Hanle effect used to measure electron-spin relaxation times, for example, cannot be used in these systems when the spin lifetimes are long. An individual nucleus in the QD is subject to milli-Tesla effective fields, arising from the interaction with its nearest neighbors and with the electronic Knight field. The alignment of each nucleus is influenced by application of external fields of the same magnitude. A polarized nuclear system, which may have an effective field st
Original languageUndefined
Pages (from-to)205303_1-15
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number20
DOIs
Publication statusPublished - 2009

Cite this

Auer, T. ; Oulton, R. ; Bauschulte, A. ; Yakovlev, D.R. ; Bayer, M. ; Verbin, S.Yu. ; Cherbunin, R.V. ; Reuter, D. ; Wieck, A.D. / MEASUREMENT OF THE KNIGHT FIELD AND LOCAL NUCLEAR DIPOLE-DIPOLE FIELD IN AN INGAAS/GAAS QUANTUM DOT ENSEMBLE. In: Physical Review B - Condensed Matter and Materials Physics. 2009 ; Vol. 80, No. 20. pp. 205303_1-15.
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title = "MEASUREMENT OF THE KNIGHT FIELD AND LOCAL NUCLEAR DIPOLE-DIPOLE FIELD IN AN INGAAS/GAAS QUANTUM DOT ENSEMBLE",
abstract = "We present a comprehensive investigation of the electron-nuclear system of negatively charged InGaAs/GaAs self-assembled quantum dots (QDs) under the influence of weak external magnetic fields (up to 3 mT). We demonstrate that, in contrast to conventional semiconductor systems, these small fields have a profound influence on the electron spin dynamics, via the hyperfine interaction. QDs, with their comparatively limited number of nuclei, present electron-nuclear behavior that is unique to low-dimensional systems. We show that the conventional Hanle effect used to measure electron-spin relaxation times, for example, cannot be used in these systems when the spin lifetimes are long. An individual nucleus in the QD is subject to milli-Tesla effective fields, arising from the interaction with its nearest neighbors and with the electronic Knight field. The alignment of each nucleus is influenced by application of external fields of the same magnitude. A polarized nuclear system, which may have an effective field st",
author = "T. Auer and R. Oulton and A. Bauschulte and D.R. Yakovlev and M. Bayer and S.Yu. Verbin and R.V. Cherbunin and D. Reuter and A.D. Wieck",
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doi = "DOI: 10.1103/PhysRevB.80.205303",
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volume = "80",
pages = "205303_1--15",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "20",

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MEASUREMENT OF THE KNIGHT FIELD AND LOCAL NUCLEAR DIPOLE-DIPOLE FIELD IN AN INGAAS/GAAS QUANTUM DOT ENSEMBLE. / Auer, T.; Oulton, R.; Bauschulte, A.; Yakovlev, D.R.; Bayer, M.; Verbin, S.Yu.; Cherbunin, R.V.; Reuter, D.; Wieck, A.D.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 80, No. 20, 2009, p. 205303_1-15.

Research output

TY - JOUR

T1 - MEASUREMENT OF THE KNIGHT FIELD AND LOCAL NUCLEAR DIPOLE-DIPOLE FIELD IN AN INGAAS/GAAS QUANTUM DOT ENSEMBLE

AU - Auer, T.

AU - Oulton, R.

AU - Bauschulte, A.

AU - Yakovlev, D.R.

AU - Bayer, M.

AU - Verbin, S.Yu.

AU - Cherbunin, R.V.

AU - Reuter, D.

AU - Wieck, A.D.

PY - 2009

Y1 - 2009

N2 - We present a comprehensive investigation of the electron-nuclear system of negatively charged InGaAs/GaAs self-assembled quantum dots (QDs) under the influence of weak external magnetic fields (up to 3 mT). We demonstrate that, in contrast to conventional semiconductor systems, these small fields have a profound influence on the electron spin dynamics, via the hyperfine interaction. QDs, with their comparatively limited number of nuclei, present electron-nuclear behavior that is unique to low-dimensional systems. We show that the conventional Hanle effect used to measure electron-spin relaxation times, for example, cannot be used in these systems when the spin lifetimes are long. An individual nucleus in the QD is subject to milli-Tesla effective fields, arising from the interaction with its nearest neighbors and with the electronic Knight field. The alignment of each nucleus is influenced by application of external fields of the same magnitude. A polarized nuclear system, which may have an effective field st

AB - We present a comprehensive investigation of the electron-nuclear system of negatively charged InGaAs/GaAs self-assembled quantum dots (QDs) under the influence of weak external magnetic fields (up to 3 mT). We demonstrate that, in contrast to conventional semiconductor systems, these small fields have a profound influence on the electron spin dynamics, via the hyperfine interaction. QDs, with their comparatively limited number of nuclei, present electron-nuclear behavior that is unique to low-dimensional systems. We show that the conventional Hanle effect used to measure electron-spin relaxation times, for example, cannot be used in these systems when the spin lifetimes are long. An individual nucleus in the QD is subject to milli-Tesla effective fields, arising from the interaction with its nearest neighbors and with the electronic Knight field. The alignment of each nucleus is influenced by application of external fields of the same magnitude. A polarized nuclear system, which may have an effective field st

U2 - DOI: 10.1103/PhysRevB.80.205303

DO - DOI: 10.1103/PhysRevB.80.205303

M3 - статья

VL - 80

SP - 205303_1-15

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 20

ER -