TY - JOUR

T1 - MBE growth and properties of branched AlGaAs nanowires on silicon

AU - Резник, Родион Романович

AU - Андреева, Анна Сергеевна

AU - Котляр, Константин Павлович

AU - Хребтов, Артем Игоревич

AU - Илькив, Игорь Владимирович

AU - Гридчин, Владислав Олегович

AU - Сошников, Илья Петрович

AU - Syuy, Alexander V.

AU - Кузнецов, Алексей

AU - Большаков, Алексей Дмитриевич

AU - Цырлин, Георгий Эрнстович

AU - Дубровский, Владимир Германович

N1 - Reznik R. et al. MBE growth and properties of branched AlGaAs nanowires on silicon //Nanotechnology. – 2025.

PY - 2025/5/16

Y1 - 2025/5/16

N2 - Branched III-V nanowires (NWs) are interesting both from the fundamental viewpoint and for the development of electronic and optoelectronic structures with enhanced functionality. Herein, we present a robust approach to synthesis of branched AlGaAs NWs using the Au-catalyzed molecular-beam epitaxy directly on Si(111) substrates. The second and third deposition of Au onto the substrate with NWs gives rise to the first and second generation of branches. First generation branches grow in the [1-100] direction perpendicular to the NW trunks; their coalescence yields the NW bridging. Compositional and structural analysis, performed by transmission electron microscopy and Raman spectroscopy, reveal an AlAs fraction of 0.2-0.3 and almost pure wurtzite crystal phase of both NW trunks and uncoalesced branches of the first generation. According to the microscopy measurements the wurzite phase purity is more than 95%. The method is useful for obtaining complex branched structures in wurtzite AlGaAs NWs on Si substrates, and may be translated to other material systems. These branched structures open new perspectives for next generation optoelectronic, energy harvesting and biological devices.

AB - Branched III-V nanowires (NWs) are interesting both from the fundamental viewpoint and for the development of electronic and optoelectronic structures with enhanced functionality. Herein, we present a robust approach to synthesis of branched AlGaAs NWs using the Au-catalyzed molecular-beam epitaxy directly on Si(111) substrates. The second and third deposition of Au onto the substrate with NWs gives rise to the first and second generation of branches. First generation branches grow in the [1-100] direction perpendicular to the NW trunks; their coalescence yields the NW bridging. Compositional and structural analysis, performed by transmission electron microscopy and Raman spectroscopy, reveal an AlAs fraction of 0.2-0.3 and almost pure wurtzite crystal phase of both NW trunks and uncoalesced branches of the first generation. According to the microscopy measurements the wurzite phase purity is more than 95%. The method is useful for obtaining complex branched structures in wurtzite AlGaAs NWs on Si substrates, and may be translated to other material systems. These branched structures open new perspectives for next generation optoelectronic, energy harvesting and biological devices.

KW - III-V semiconductors

KW - molecular-beam epitaxy

KW - nanowires

KW - wurzite

UR - https://www.mendeley.com/catalogue/3350dfaf-8a48-3e40-b0ea-68ee692e9e59/

U2 - 10.1088/1361-6528/add9aa

DO - 10.1088/1361-6528/add9aa

M3 - Article

VL - 36

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 23

M1 - 235601

ER -