Abstract

In a particular case of Au-catalyzed InxGa1 -xAs nanowires, wide compositional tuning has been obtained using metal organic vapor-phase epitaxy, which remains difficult for molecular beam epitaxy. InxGa1 -xAs nanowires are demonstrated withx= 0.5, grown by Au-catalyzed molecular beam epitaxy via the vapor-solid-solid mode at a low temperature of 220 degrees C. Low-temperature growth suppresses re-evaporation of indium and gallium atoms and their surface diffusion, which is why the composition of ternary nanowires is precisely determined by the indium content in vapor. This method can be used for compositional tuning of other ternary III-V and III-N nanowires grown by molecular beam epitaxy.

Translated title of the contributionМПЭ выращенные InGaAs Нитевидные нанокристаллы с 50% составом
Original languageEnglish
Pages (from-to)650-653
Number of pages4
JournalSemiconductors
Volume54
Issue number6
DOIs
Publication statusPublished - 1 Jun 2020

Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

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