Mathematical modeling of field electron emission from semiconductor with "electrical centroid rule"

V. P. Denissov, M. I. Varajun'

Research output: Contribution to journalConference articlepeer-review

Abstract

Development of vacuum microelectronics, polarized electron sources, and flat displays renewed interest in field electron emission from semiconductors. In the report some results of mathematical modeling of this phenomenon are presented with electron escape probability calculated with "electrical centroid role" for 2D layer at a surface. Advantages of such approach compared to the conventional image force account are discussed for flat and nano-tip emitters. The current-voltage plots are constructed for some promising emitters.

Original languageEnglish
Pages (from-to)32-35
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4348
DOIs
StatePublished - 1 Jan 2001
Event4th International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering - St. Petersburg, Russian Federation
Duration: 12 Jun 200017 Jun 2000

Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Keywords

  • Electrical centroid rule
  • Field electron emission

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