Luminescence from germanium and germanium on silicon

T. Arguirov, M. Kittler, M. Oehme, N.V. Abrosimov, O.F. Vyvenko, E. Kasper, J. Schulze

Research output

4 Citations (Scopus)

Abstract

We present an overview on generation of direct gap photo-and electroluminescence in Ge bulk wafers, Ge thin films deposited on Si, and Ge p-i-n diodes prepared on Si substrates. We analyzed the emission in a spectral range from 0.45 eV to 0.95 eV, covering the radiation caused by direct gap transitions, the indirect one, and also the luminescence related to transition on dislocations. The temperature and excitation level strongly influence the intensities of direct and indirect photoluminescence in bulk samples. As it could be expected, high temperature and excitation favour the generation of direct gap luminescence. Intrinsic bulk Ge shows a quadratic dependence of the direct gap luminescence on the excitation and a sub-quadratic one for the indirect. The photoluminescence spectra taken from intrinsic Ge on Si layers show features related to dislocations. There are two spectral regions associated with dislocation recombination. At room temperature one is at around 0.45 eV and the other at 0.72 eV. We found s
Original languageEnglish
Title of host publicationLuminescence from germanium and germanium on silicon
Pages383-393
DOIs
Publication statusPublished - 2014

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