Low-temperature in-induced holes formation in native-SiOx/Si(111) substrates for self-catalyzed MBE gROWTH of GaAs nanowires

Rodion R. Reznik, Konstantin P. Kotlyar, Vladislav O. Gridchin, Evgeniy V. Ubyivovk, Vladimir V. Federov, Artem I. Khrebtov, Dmitrii S. Shevchuk, George E. Cirlin

Research output


The reduction of substrate temperature is important in view of the integration of III-V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiOx layer on Si(111) substrate via In-induced drilling. Using the fabricated template, we successfully grew self-catalyzed GaAs nanowires by molecular-beam epitaxy. Energy-dispersive X-ray analysis reveals no indium atoms inside the nanowires. This unambiguously manifests that the procedure proposed can be used for the growth of ultra-pure GaAs nanowires.

Original languageEnglish
Article number3449
Issue number16
Publication statusPublished - Aug 2020

Scopus subject areas

  • Materials Science(all)

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