Direct statistical simulation of non-stationary non-equilibrium electronic phenomena in one-dimensional semiconductor structures is carried out to estimate their influence on the field emission from semiconductors in different working modes of needle cathodes. A macroparticles method is used with self-consistent electric field conditions, taking into account the three-dimensional character of the electron scattering. Computation results are given for n-type A IIIBV semiconductors.
Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials