Kinetic approach to field emission from semiconductors by computer simulation using particles

V. E. Gherm, N. V. Mileshkina, E. A. Semykina

Research output

7 Citations (Scopus)


Direct statistical simulation of non-stationary non-equilibrium electronic phenomena in one-dimensional semiconductor structures is carried out to estimate their influence on the field emission from semiconductors in different working modes of needle cathodes. A macroparticles method is used with self-consistent electric field conditions, taking into account the three-dimensional character of the electron scattering. Computation results are given for n-type A IIIBV semiconductors.

Original languageEnglish
Article number017
Pages (from-to)1263-1270
Number of pages8
JournalJournal of Physics: Condensed Matter
Issue number5
Publication statusPublished - 1990
Externally publishedYes


Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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