Investigation of the excitation of ion beams in the explosive mode emission of semiconductors

V. P. Denisov, N. V. Egorov, A. P. Prudnikov

Research output: Contribution to conferencePaperpeer-review

Abstract

We investigated the possibility of ion beams production at the germanium and silicon tips with the micro- and millisecond pulses. The results of the experiments show that the semiconducting tips are promising for ion beams production. There are the modes of exploitation in which the reproducible amplitudes of the ion current pulses are obtained.

Original languageEnglish
Pages762-764
Number of pages3
StatePublished - 1 Jan 1996
EventProceedings of the 1996 17th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV. Part 1 (of 2) - Berkeley, CA, USA
Duration: 21 Jul 199626 Jul 1996

Conference

ConferenceProceedings of the 1996 17th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV. Part 1 (of 2)
CityBerkeley, CA, USA
Period21/07/9626/07/96

Scopus subject areas

  • Engineering(all)

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