Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN

O. Medvedev, O. Vyvenko, E. Ubyivovk, S. Shapenkov, A. Bondarenko, P. Saring, M. Seibt

Research output: Contribution to journalArticleResearchpeer-review

7 Citations (Scopus)

Abstract

Dislocations introduced by the scratching or by the indentation of the basal and prismatic surfaces of low-ohmic unintentionally n-type doped GaN crystals were investigated by means of cathodoluminescence and transmission electron microscopy (TEM). A strong luminescence of straight segments of a-screw dislocations was observed in the temperature range of 70-420K. The spectrum of dislocation related luminescence (DRL) consisted of a doublet of narrow lines red shifted by about 0.3 eV with respect to the band gap. TEM revealed dissociated character of the screw dislocations and the formation of extended nodes at their intersection. From the analysis of the DRL spectral doublet temperature, power and strain dependences DRL was ascribed to direct and indirect excitons bound by 1D quantum wells formed by partials and stacking fault (SF) ribbon of dissociated screw dislocation. Published by AIP Publishing.

Original languageEnglish
Article number161427
Number of pages10
JournalJournal of Applied Physics
Volume123
Issue number16
DOIs
StatePublished - 28 Apr 2018
Event29th International Conference on Defects in Semiconductors - Matsue, Japan
Duration: 30 Jul 20173 Aug 2017
Conference number: 29
http://www.icds2017.org/

Keywords

  • TRANSMISSION ELECTRON-MICROSCOPE
  • STACKING-FAULTS
  • GALLIUM NITRIDE
  • CATHODOLUMINESCENCE
  • PHOTOLUMINESCENCE
  • RECOMBINATION
  • DEFORMATION
  • EXCITONS
  • ENERGY

Scopus subject areas

  • Physics and Astronomy(all)

Cite this

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title = "Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN",
abstract = "Dislocations introduced by the scratching or by the indentation of the basal and prismatic surfaces of low-ohmic unintentionally n-type doped GaN crystals were investigated by means of cathodoluminescence and transmission electron microscopy (TEM). A strong luminescence of straight segments of a-screw dislocations was observed in the temperature range of 70-420K. The spectrum of dislocation related luminescence (DRL) consisted of a doublet of narrow lines red shifted by about 0.3 eV with respect to the band gap. TEM revealed dissociated character of the screw dislocations and the formation of extended nodes at their intersection. From the analysis of the DRL spectral doublet temperature, power and strain dependences DRL was ascribed to direct and indirect excitons bound by 1D quantum wells formed by partials and stacking fault (SF) ribbon of dissociated screw dislocation. Published by AIP Publishing.",
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author = "O. Medvedev and O. Vyvenko and E. Ubyivovk and S. Shapenkov and A. Bondarenko and P. Saring and M. Seibt",
year = "2018",
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Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN. / Medvedev, O.; Vyvenko, O.; Ubyivovk, E.; Shapenkov, S.; Bondarenko, A.; Saring, P.; Seibt, M.

In: Journal of Applied Physics, Vol. 123, No. 16, 161427, 28.04.2018.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN

AU - Medvedev, O.

AU - Vyvenko, O.

AU - Ubyivovk, E.

AU - Shapenkov, S.

AU - Bondarenko, A.

AU - Saring, P.

AU - Seibt, M.

PY - 2018/4/28

Y1 - 2018/4/28

N2 - Dislocations introduced by the scratching or by the indentation of the basal and prismatic surfaces of low-ohmic unintentionally n-type doped GaN crystals were investigated by means of cathodoluminescence and transmission electron microscopy (TEM). A strong luminescence of straight segments of a-screw dislocations was observed in the temperature range of 70-420K. The spectrum of dislocation related luminescence (DRL) consisted of a doublet of narrow lines red shifted by about 0.3 eV with respect to the band gap. TEM revealed dissociated character of the screw dislocations and the formation of extended nodes at their intersection. From the analysis of the DRL spectral doublet temperature, power and strain dependences DRL was ascribed to direct and indirect excitons bound by 1D quantum wells formed by partials and stacking fault (SF) ribbon of dissociated screw dislocation. Published by AIP Publishing.

AB - Dislocations introduced by the scratching or by the indentation of the basal and prismatic surfaces of low-ohmic unintentionally n-type doped GaN crystals were investigated by means of cathodoluminescence and transmission electron microscopy (TEM). A strong luminescence of straight segments of a-screw dislocations was observed in the temperature range of 70-420K. The spectrum of dislocation related luminescence (DRL) consisted of a doublet of narrow lines red shifted by about 0.3 eV with respect to the band gap. TEM revealed dissociated character of the screw dislocations and the formation of extended nodes at their intersection. From the analysis of the DRL spectral doublet temperature, power and strain dependences DRL was ascribed to direct and indirect excitons bound by 1D quantum wells formed by partials and stacking fault (SF) ribbon of dissociated screw dislocation. Published by AIP Publishing.

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KW - RECOMBINATION

KW - DEFORMATION

KW - EXCITONS

KW - ENERGY

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