Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN

O. Medvedev, O. Vyvenko, E. Ubyivovk, S. Shapenkov, A. Bondarenko, P. Saring, M. Seibt

Research output

10 Citations (Scopus)


Dislocations introduced by the scratching or by the indentation of the basal and prismatic surfaces of low-ohmic unintentionally n-type doped GaN crystals were investigated by means of cathodoluminescence and transmission electron microscopy (TEM). A strong luminescence of straight segments of a-screw dislocations was observed in the temperature range of 70-420K. The spectrum of dislocation related luminescence (DRL) consisted of a doublet of narrow lines red shifted by about 0.3 eV with respect to the band gap. TEM revealed dissociated character of the screw dislocations and the formation of extended nodes at their intersection. From the analysis of the DRL spectral doublet temperature, power and strain dependences DRL was ascribed to direct and indirect excitons bound by 1D quantum wells formed by partials and stacking fault (SF) ribbon of dissociated screw dislocation. Published by AIP Publishing.

Original languageEnglish
Article number161427
Number of pages10
JournalJournal of Applied Physics
Issue number16
Publication statusPublished - 28 Apr 2018
Event29th International Conference on Defects in Semiconductors - Matsue
Duration: 30 Jul 20173 Aug 2017
Conference number: 29

Scopus subject areas

  • Physics and Astronomy(all)

Cite this