Interface induced quantized spin Hall response in three-dimensional topological insulator/normal insulator heterostructures

V. N. Men'shov, I. A. Shvets, V. V. Tugushev, E. V. Chulkov

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

We report analytic investigation of the electronic properties of heterostructures comprised by films of three-dimensional topological insulator (TI) and normal insulator (NI) revealing strong interface and size effects on their spin transport characteristics. Imposing at the TI/NI interfaces the natural boundary conditions within a continual scheme, we show that the intrinsic spin Hall response of the NI/TI/NI trilayer can be controlled by tuning the interface potential (IP) together with the TI film thickness. We predict a series of interface induced quantum transitions between topological insulating phase and trivial band insulator phase. We calculate the phase diagram of the NI/TI/NI trilayer and establish an appropriate range of the IP strength and the TI film thickness to realize the regime of quantum spin Hall effect. Our results can provide a useful guide in choosing the relevant material parameters to facilitate the detection of quantum spin Hall conductivity in the TI/NI heterostructures.

Original languageEnglish
Pages (from-to)231-235
Number of pages5
JournalJournal of Magnetism and Magnetic Materials
Volume459
DOIs
StatePublished - 1 Aug 2018

Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Keywords

  • Interface states
  • Quantum spin Hall effect
  • Topological insulator
  • STATES
  • BOUNDARY

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