Research output: Contribution to journal › Article › peer-review
Inhibition of Oxygen Scavenging by TiN at the TiN/SiO2 Interface by Atomic-Layer-Deposited Al2O3 Protective Interlayer. / Filatova, Elena O.; Sakhonenkov, Sergei S.; Konashuk, Aleksei S.; Kasatikov, Sergey A.; Afanas'ev, Valeri V.
In: Journal of Physical Chemistry C, Vol. 123, No. 36, 12.09.2019, p. 22335-22344.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Inhibition of Oxygen Scavenging by TiN at the TiN/SiO2 Interface by Atomic-Layer-Deposited Al2O3 Protective Interlayer
AU - Filatova, Elena O.
AU - Sakhonenkov, Sergei S.
AU - Konashuk, Aleksei S.
AU - Kasatikov, Sergey A.
AU - Afanas'ev, Valeri V.
N1 - Publisher Copyright: © 2019 American Chemical Society.
PY - 2019/9/12
Y1 - 2019/9/12
N2 - Chemical composition of interfaces between physical-vapor-deposited TiN and SiO2 as affected by introduction of a thin (0.5-3 nm) alumina interlayer was studied using photoelectron spectroscopy with high kinetic energies of photoelectrons (HAXPES) and a near-edge X-ray absorption fine structure (NEXAFS). Our results reveal the formation of TiO2 and titanium oxynitride phases both at the bottom interface of the TiN film and at its surface due to oxygen scavenging from the SiO2 and oxidation in air, respectively. Insertion of alumina layer as thin as the size of nanometers prevents the TiO2 growth at the bottom TiN/SiO2 interface but leads to the formation of an aluminosilicate layer. The thickness of this silicate layer is practically independent on the thickness of Al2O3. Presumably, the observed formation of SiOx (x < 2) at the Al2O3/SiO2 interface is a result of oxygen scavenging from silicon oxide by oxygen vacancies in alumina that formed because of Al2O3 and TiN interaction. The present study demonstrates that the oxidation of TiN to a TiO2 phase at the TiN/SiO2 interface can effectively be inhibited by an insertion of a nanometer-thin Al2O3 layer.
AB - Chemical composition of interfaces between physical-vapor-deposited TiN and SiO2 as affected by introduction of a thin (0.5-3 nm) alumina interlayer was studied using photoelectron spectroscopy with high kinetic energies of photoelectrons (HAXPES) and a near-edge X-ray absorption fine structure (NEXAFS). Our results reveal the formation of TiO2 and titanium oxynitride phases both at the bottom interface of the TiN film and at its surface due to oxygen scavenging from the SiO2 and oxidation in air, respectively. Insertion of alumina layer as thin as the size of nanometers prevents the TiO2 growth at the bottom TiN/SiO2 interface but leads to the formation of an aluminosilicate layer. The thickness of this silicate layer is practically independent on the thickness of Al2O3. Presumably, the observed formation of SiOx (x < 2) at the Al2O3/SiO2 interface is a result of oxygen scavenging from silicon oxide by oxygen vacancies in alumina that formed because of Al2O3 and TiN interaction. The present study demonstrates that the oxidation of TiN to a TiO2 phase at the TiN/SiO2 interface can effectively be inhibited by an insertion of a nanometer-thin Al2O3 layer.
KW - X-RAY-ABSORPTION
KW - TITANIUM NITRIDE
KW - PHOTOELECTRON-SPECTROSCOPY
KW - THERMAL-OXIDATION
KW - FILMS
KW - SPECTRA
KW - VALENCE
UR - http://www.scopus.com/inward/record.url?scp=85072575548&partnerID=8YFLogxK
UR - http://www.mendeley.com/research/inhibition-oxygen-scavenging-tin-tinsio2-interface-atomiclayerdeposited-al2o3-protective-interlayer
U2 - 10.1021/acs.jpcc.9b05800
DO - 10.1021/acs.jpcc.9b05800
M3 - Article
AN - SCOPUS:85072575548
VL - 123
SP - 22335
EP - 22344
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
SN - 1932-7447
IS - 36
ER -
ID: 45754411