Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators

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1 Citation (Scopus)

Abstract

The effect of an ultrathin Pb film deposited on the surface of Bi2Se3 and Sb2Te3 compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.

Original languageEnglish
Pages (from-to)535-540
Number of pages6
JournalJournal of Experimental and Theoretical Physics
Volume126
Issue number4
DOIs
Publication statusPublished - 1 Apr 2018

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photoelectric emission
insulators
quantum wells
quantum computers
electronics
cones
binding energy
spectroscopy

Scopus subject areas

  • Physics and Astronomy(all)

Cite this

@article{122ed9887bfc48b1855c716b1c874a69,
title = "Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators",
abstract = "The effect of an ultrathin Pb film deposited on the surface of Bi2Se3 and Sb2Te3 compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.",
author = "Surnin, {Yu A.} and Klimovskikh, {I. I.} and Sostina, {D. M.} and Kokh, {K. A.} and Tereshchenko, {O. E.} and Shikin, {A. M.}",
year = "2018",
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TY - JOUR

T1 - Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators

AU - Surnin, Yu A.

AU - Klimovskikh, I. I.

AU - Sostina, D. M.

AU - Kokh, K. A.

AU - Tereshchenko, O. E.

AU - Shikin, A. M.

PY - 2018/4/1

Y1 - 2018/4/1

N2 - The effect of an ultrathin Pb film deposited on the surface of Bi2Se3 and Sb2Te3 compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.

AB - The effect of an ultrathin Pb film deposited on the surface of Bi2Se3 and Sb2Te3 compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.

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