Impact of hydrogenation on electrical properties of NiSi2 precipitates in silicon

O. F. Vyvenko, N. V. Bazlov, M. V. Trushin, A. A. Nadolinski, M. Seibt, W. Schröter, G. Hahn

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Abstract

Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as "band-like" or "localized". In both n- and p-type samples DLTS-peak in the initial as quenched samples showed band-like behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial "band-like" behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20μm.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XI, Gadest 2005 - Proceedings of the 11th International Autumn Meeting
PublisherTrans Tech Publications Ltd
Pages279-284
Number of pages6
ISBN (Print)3908451132, 9783908451136
DOIs
StatePublished - 2005
Event11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005 - Giens, France
Duration: 25 Sep 200530 Sep 2005

Publication series

NameSolid State Phenomena
Volume108-109
ISSN (Print)1012-0394

Conference

Conference11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005
CountryFrance
CityGiens
Period25/09/0530/09/05

Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Keywords

  • DLTS
  • Hydrogenation
  • Nickel suicide
  • Precipitates
  • Silicon

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