In this study we compare the growth of gallium oxide films by halide vapor phase epitaxy (HVPE) on various substrates under the same growth conditions. Gallium oxide films were deposited at 500 C-600 C on basal plane (0001) planar and patterned sapphire substrates, (0001) 2H-GaN, 4H-SiC, and bulk β-Ga2O3 substrates. The layers were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and cathodoluminescence (CL) techniques. Most of the films exhibit growth features of hexagonal symmetry. Sn-doped Ga2O3 films exhibit n-type electrical conductivity. Heterojunctions composed of n-type hexagonal Ga2O3:Sn and p-type GaN:Mg demonstrate diode-like I-V characteristics and emit light under forward bias.

Original languageEnglish
Article number045014
JournalECS Journal of Solid State Science and Technology
Issue number4
Publication statusPublished - 5 Jan 2020

Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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