High-temperature annealing of bulk GaN layers

V. N. Bessolov, Yu V. Zhilyaev, M. E. Kompan, E. V. Konenkova, S. A. Kukushkin, M. V. Mesh, S. D. Raevskiǐ, A. L. Fradkov, V. A. Fedirko

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4 Scopus citations


The influence of high-temperature (1010°C) annealing in a flow of gaseous ammonia on the properties of bulk GaN layers, grown by chloride-hydride VPE and then separated from SiO2 substrates, was studied using atomic force microscopy. The bulk (∼360-μm-thick) epitaxial GaN layers were synthesized in two steps: a first stage of nucleation and growth at a low temperature (530°C) followed by epitaxy at a high temperature (970°C). It was found that the annealing increases the nanorelief height and activates the donor-acceptor recombination on the surface of a GaN layer grown at the lower temperature and decreases the intensity of photoluminescence from the layer grown at the higher temperature.

Original languageEnglish
Pages (from-to)994-996
Number of pages3
JournalTechnical Physics Letters
Issue number12
StatePublished - 1 Dec 2002

Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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