Helium Ion Beam Enhanced Local Etching of Silicon Nitride

Yu. V. Petrov, T. V. Sharov, A. P. Baraban, O.F. Vyvenko

Research outputpeer-review

3 Citations (Scopus)

Abstract

We investigated the effect of the helium ion implantation on the etching rate of silicon nitride in hydrofluoric acid. Helium ions were implanted into 500-nm-thick silicon nitride film with energies from 15 keV to 35 keV. The ion fluence from 10(14) cm(-2) to 10(17) cm(-2) was used. All samples were investigated with a scanning electron microscope and atomic force microscope. The dependence of the etching rate on the concentration of ion-induced defects is obtained.
Original languageEnglish
Title of host publicationHelium Ion Beam Enhanced Local Etching of Silicon Nitride
PublisherAmerican Institute of Physics
Number of pages6
Volume1748
ISBN (Print)9780735414051
DOIs
Publication statusPublished - Jun 2016

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  • Cite this

    Petrov, Y. V., Sharov, T. V., Baraban, A. P., & Vyvenko, O. F. (Ed.) (2016). Helium Ion Beam Enhanced Local Etching of Silicon Nitride. In Helium Ion Beam Enhanced Local Etching of Silicon Nitride (Vol. 1748). American Institute of Physics. https://doi.org/10.1063/1.4954350