Field-controlled domain-wall resistance in magnetic nanojunctions

J. D. Burton, A. Kashyap, M. Ye Zhuravlev, R. Skomski, E. Y. Tsymbal, S. S. Jaswal, O. N. Mryasov, R. W. Chantrell

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

The electrical resistance of a constrained domain wall (DW) in a nanojunction was discussed. It was found that the anisotropy of the electrodes favors a localization of the domain wall within the constriction (wire) revealing a positive domain-wall resistance. An applied magnetic field moved the domain wall toward one of the electrodes and reduced its width. A sizeable enhancement of the domain-wall resistance was found to be due to this compression of the domain wall.

Original languageEnglish
Pages (from-to)251-253
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number2
DOIs
StatePublished - 12 Jul 2004

Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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