Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition

A. P. Baraban, E. A. Denisov, V. A. Dmitriev, A. V. Drozd, V. E. Drozd, A. A. Selivanov, R. P. Seisyan

Research output

Abstract

Abstract: The characteristics of silicon-oxide layers deposited by various technological methods are compared. It is shown that the catalytic method for obtaining silicon-oxide layers by molecular layering has a number of advantages. The main advantages are a low growth temperature, high-quality interface with a silicon substrate, and high growth rate of films. Studies by cathodoluminescence made it possible to evaluate the structural quality of silicon-oxide layers produced by molecular layering and confirmed the potential of this method in obtaining high-quality silicon-oxide films for broad practical application.

Original languageEnglish
Pages (from-to)506-510
Number of pages5
JournalSemiconductors
Volume54
Issue number4
DOIs
Publication statusPublished - 1 Apr 2020

Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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