Extended core structure and luminescence of a-screw dislocations in GaN

O. S. Medvedev, O. F. Vyvenko, E. V. Ubyivovk, S. V. Shapenkov, M. Seibt

Research output

1 Citation (Scopus)


Straight segments of a-screw dislocations introduced by scratching of basal (0001) of intentionally undoped low-ohmic GaN radiate a doublet of narrow luminescent lines in the spectral region at about 3.1-3.2 eV while the dislocation intersection points possess luminescence band at about 3.3 eV. Transmission electron microscopy reveals that the dislocation cores are dissociated into two 300 partials separated by stacking fault (SF) ribbon with the width of 4-6 nm width and that the dislocation nodes contain extended SF of sizes of 25-30 nm. Dislocation-related luminescence (DRL) is ascribed to exciton bound by the states of partial dislocation cores and of SF quantum well. The increase of the SF lateral sizes is assumed to cause the DRL spectral shift between straight dislocations and their nodes due to the system dimensionality transition from 1D to 2D respectively.

Original languageEnglish
Article number012006
JournalJournal of Physics: Conference Series
Issue number1
Publication statusPublished - 23 May 2019
Event19th International Conference on Extended Defects in Semiconductors, EDS 2018 - Thessaloniki
Duration: 24 Jun 201829 Jun 2018

Scopus subject areas

  • Physics and Astronomy(all)

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