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Ex post manipulation of barriers in InGaAs tunnel injection devices. / Talalaev, V.G.; Cirlin, G.E.; Novikov, B.V.; Fuhrmann, B.; Werner, P.; Tomm, J.W.

In: Applied Physics Letters, 2015.

Research output: Contribution to journal › Article

Harvard

Talalaev, VG, Cirlin, GE, Novikov, BV, Fuhrmann, B, Werner, P & Tomm, JW 2015, 'Ex post manipulation of barriers in InGaAs tunnel injection devices.', Applied Physics Letters. https://doi.org/10.1063/1.4905467

APA

Talalaev, V. G., Cirlin, G. E., Novikov, B. V., Fuhrmann, B., Werner, P., & Tomm, J. W. (2015). Ex post manipulation of barriers in InGaAs tunnel injection devices. Applied Physics Letters. https://doi.org/10.1063/1.4905467

Vancouver

Talalaev VG, Cirlin GE, Novikov BV, Fuhrmann B, Werner P, Tomm JW. Ex post manipulation of barriers in InGaAs tunnel injection devices. Applied Physics Letters. 2015. https://doi.org/10.1063/1.4905467

Author

Talalaev, V.G. ; Cirlin, G.E. ; Novikov, B.V. ; Fuhrmann, B. ; Werner, P. ; Tomm, J.W. / Ex post manipulation of barriers in InGaAs tunnel injection devices. In: Applied Physics Letters. 2015.

BibTeX

@article{7ece515f4a7f4c0abdf4dedbb9ecf623,
title = "Ex post manipulation of barriers in InGaAs tunnel injection devices.",
author = "V.G. Talalaev and G.E. Cirlin and B.V. Novikov and B. Fuhrmann and P. Werner and J.W. Tomm",
year = "2015",
doi = "10.1063/1.4905467",
language = "English",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",

}

RIS

TY - JOUR

T1 - Ex post manipulation of barriers in InGaAs tunnel injection devices.

AU - Talalaev, V.G.

AU - Cirlin, G.E.

AU - Novikov, B.V.

AU - Fuhrmann, B.

AU - Werner, P.

AU - Tomm, J.W.

PY - 2015

Y1 - 2015

U2 - 10.1063/1.4905467

DO - 10.1063/1.4905467

M3 - Article

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -

ID: 3983095