Etching of GaN layers at electrolysis under UV-irradiation

T. K. Zubenko, M. V. Puzyk, V. M. Stozharov, I. A. Ermakov, D. S. Kovalev, S. A. Ivanova, A. S. Usikov, O. S. Medvedev, B. P. Papchenko, S. Yu Kurin, A. A. Antipov, A. E. Chernyakov

Research outputpeer-review

1 Citation (Scopus)

Abstract

Etching of the GaN layers in 1M KOH aqua solution under irradiation was studied by the electro-stimulated photolysis using N2-laser (337 nm, 60 W/m2) as a light source. It was observed that the size and the depth of the failure monotonically depend on the optical power and the irradiation time of the N2 laser and the GaN layer type of conductivity. The GaN layers etching rate was evaluated. A mechanism of the failure in the n-GaN layers is discussed.

Original languageEnglish
Article number012050
JournalJournal of Physics: Conference Series
Volume741
Issue number1
DOIs
Publication statusPublished - 15 Sep 2016
Event3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2016 - St Petersburg
Duration: 28 Mar 201630 Mar 2016

Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Zubenko, T. K., Puzyk, M. V., Stozharov, V. M., Ermakov, I. A., Kovalev, D. S., Ivanova, S. A., ... Chernyakov, A. E. (2016). Etching of GaN layers at electrolysis under UV-irradiation. Journal of Physics: Conference Series, 741(1), [012050]. https://doi.org/10.1088/1742-6596/741/1/012050
Zubenko, T. K. ; Puzyk, M. V. ; Stozharov, V. M. ; Ermakov, I. A. ; Kovalev, D. S. ; Ivanova, S. A. ; Usikov, A. S. ; Medvedev, O. S. ; Papchenko, B. P. ; Kurin, S. Yu ; Antipov, A. A. ; Chernyakov, A. E. / Etching of GaN layers at electrolysis under UV-irradiation. In: Journal of Physics: Conference Series. 2016 ; Vol. 741, No. 1.
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abstract = "Etching of the GaN layers in 1M KOH aqua solution under irradiation was studied by the electro-stimulated photolysis using N2-laser (337 nm, 60 W/m2) as a light source. It was observed that the size and the depth of the failure monotonically depend on the optical power and the irradiation time of the N2 laser and the GaN layer type of conductivity. The GaN layers etching rate was evaluated. A mechanism of the failure in the n-GaN layers is discussed.",
author = "Zubenko, {T. K.} and Puzyk, {M. V.} and Stozharov, {V. M.} and Ermakov, {I. A.} and Kovalev, {D. S.} and Ivanova, {S. A.} and Usikov, {A. S.} and Medvedev, {O. S.} and Papchenko, {B. P.} and Kurin, {S. Yu} and Antipov, {A. A.} and Chernyakov, {A. E.}",
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Zubenko, TK, Puzyk, MV, Stozharov, VM, Ermakov, IA, Kovalev, DS, Ivanova, SA, Usikov, AS, Medvedev, OS, Papchenko, BP, Kurin, SY, Antipov, AA & Chernyakov, AE 2016, 'Etching of GaN layers at electrolysis under UV-irradiation', Journal of Physics: Conference Series, vol. 741, no. 1, 012050. https://doi.org/10.1088/1742-6596/741/1/012050

Etching of GaN layers at electrolysis under UV-irradiation. / Zubenko, T. K.; Puzyk, M. V.; Stozharov, V. M.; Ermakov, I. A.; Kovalev, D. S.; Ivanova, S. A.; Usikov, A. S.; Medvedev, O. S.; Papchenko, B. P.; Kurin, S. Yu; Antipov, A. A.; Chernyakov, A. E.

In: Journal of Physics: Conference Series, Vol. 741, No. 1, 012050, 15.09.2016.

Research outputpeer-review

TY - JOUR

T1 - Etching of GaN layers at electrolysis under UV-irradiation

AU - Zubenko, T. K.

AU - Puzyk, M. V.

AU - Stozharov, V. M.

AU - Ermakov, I. A.

AU - Kovalev, D. S.

AU - Ivanova, S. A.

AU - Usikov, A. S.

AU - Medvedev, O. S.

AU - Papchenko, B. P.

AU - Kurin, S. Yu

AU - Antipov, A. A.

AU - Chernyakov, A. E.

PY - 2016/9/15

Y1 - 2016/9/15

N2 - Etching of the GaN layers in 1M KOH aqua solution under irradiation was studied by the electro-stimulated photolysis using N2-laser (337 nm, 60 W/m2) as a light source. It was observed that the size and the depth of the failure monotonically depend on the optical power and the irradiation time of the N2 laser and the GaN layer type of conductivity. The GaN layers etching rate was evaluated. A mechanism of the failure in the n-GaN layers is discussed.

AB - Etching of the GaN layers in 1M KOH aqua solution under irradiation was studied by the electro-stimulated photolysis using N2-laser (337 nm, 60 W/m2) as a light source. It was observed that the size and the depth of the failure monotonically depend on the optical power and the irradiation time of the N2 laser and the GaN layer type of conductivity. The GaN layers etching rate was evaluated. A mechanism of the failure in the n-GaN layers is discussed.

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DO - 10.1088/1742-6596/741/1/012050

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VL - 741

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

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Zubenko TK, Puzyk MV, Stozharov VM, Ermakov IA, Kovalev DS, Ivanova SA et al. Etching of GaN layers at electrolysis under UV-irradiation. Journal of Physics: Conference Series. 2016 Sep 15;741(1). 012050. https://doi.org/10.1088/1742-6596/741/1/012050