Erbium-mediated photoconductivity of Ga-Ge-S-Se: Er3+ chalcogenide glasses

Research output

5 Citations (Scopus)

Abstract

Photoconductivity mediated by erbium ions in chalcogenide glasses Ga-Ge-S has been found. The conductivity of glasses undoped and doped with erbium has been studied under irradiation by laser light at λ = 813 nm. In both cases the optical band-gap energy exceeds by several times the laser photon energy. It has been observed that the exposure to sub-band-gap light does not change the conductivity of the undoped glass, whereas it leads to a significant increase in the conductivity of the glass doped with erbium. We propose a two-photon mechanism of the photoconductivity in this glass, where erbium accumulates laser energy and then transfers it nonradiatively to the glass matrix (energy backtransfer).

Original languageEnglish
Article number175110
JournalJournal of Physics D - Applied Physics
Volume41
Issue number17
DOIs
Publication statusPublished - 7 Sep 2008

    Fingerprint

Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this