Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2

A. K. Kaveev, A. G. Banshchikov, A. N. Terpitskiy, V. A. Golyashov, O. E. Tereshchenko, K. A. Kokh, D. A. Estyunin, A. M. Shikin

Research output

Abstract

It is shown for the first time that Co subnanometer coatings deposited by molecular-beam epitaxy on the (0001) surface of the topological insulator BiSbTeSe2 at a temperature of 330°C open an energy gap in the spectrum of topological surface states in the region of the Dirac point with a shift of the Dirac-point position caused by the preliminary deposition of an adsorbate at room temperature. The gap width is 21 ± 6 meV. Temperature-dependent measurements in the range of 15–150 K show no changes in the energy-gap width.

Original languageEnglish
Pages (from-to)1051-1055
JournalSemiconductors
Volume54
Issue number9
DOIs
Publication statusPublished - 1 Sep 2020
EventXXIV Symposium “Nanophysics and Nanoelectronics” - Nizhny Novgorod
Duration: 10 Mar 202012 Mar 2020

Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe<sub>2</sub>'. Together they form a unique fingerprint.

Cite this