Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2 Te2 S

E. Annese, T. Okuda, E. F. Schwier, H. Iwasawa, K. Shimada, M. Natamane, M. Taniguchi, I. P. Rusinov, S. V. Eremeev, K. A. Kokh, V. A. Golyashov, O. E. Tereshchenko, E. V. Chulkov, A. Kimura

Research output

3 Citations (Scopus)

Abstract

We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron spectroscopy as well as density functional theory and GW calculations revealed a wide-band-gap three-dimensional topological insulator phase. The surface electronic spectrum is characterized by the topological surface state (TSS) with Dirac point located above the valence band and Fermi level lying in the band gap. TSS band dispersion and constant energy contour manifest a weak warping effect near the Fermi level along with in-plane and out-of-plane spin polarization along the Γ-K̄ line. We identified four additional states at deeper binding energies with high in-plane spin polarization.

Original languageEnglish
Article number205113
JournalPhysical Review B
Volume97
Issue number20
DOIs
Publication statusPublished - 10 May 2018

Fingerprint

Spin polarization
Surface states
Fermi level
Energy gap
insulators
electronic structure
broadband
Photoelectron spectroscopy
Valence bands
Binding energy
Density functional theory
K lines
polarization
electronic spectra
binding energy
Chemical analysis
photoelectron spectroscopy
density functional theory
valence
energy

Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Annese, E., Okuda, T., Schwier, E. F., Iwasawa, H., Shimada, K., Natamane, M., ... Kimura, A. (2018). Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2 Te2 S. Physical Review B, 97(20), [205113]. https://doi.org/10.1103/PhysRevB.97.205113
Annese, E. ; Okuda, T. ; Schwier, E. F. ; Iwasawa, H. ; Shimada, K. ; Natamane, M. ; Taniguchi, M. ; Rusinov, I. P. ; Eremeev, S. V. ; Kokh, K. A. ; Golyashov, V. A. ; Tereshchenko, O. E. ; Chulkov, E. V. ; Kimura, A. / Electronic and spin structure of the wide-band-gap topological insulator : Nearly stoichiometric Bi2 Te2 S. In: Physical Review B. 2018 ; Vol. 97, No. 20.
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Electronic and spin structure of the wide-band-gap topological insulator : Nearly stoichiometric Bi2 Te2 S. / Annese, E.; Okuda, T.; Schwier, E. F.; Iwasawa, H.; Shimada, K.; Natamane, M.; Taniguchi, M.; Rusinov, I. P.; Eremeev, S. V.; Kokh, K. A.; Golyashov, V. A.; Tereshchenko, O. E.; Chulkov, E. V.; Kimura, A.

In: Physical Review B, Vol. 97, No. 20, 205113, 10.05.2018.

Research output

TY - JOUR

T1 - Electronic and spin structure of the wide-band-gap topological insulator

T2 - Nearly stoichiometric Bi2 Te2 S

AU - Annese, E.

AU - Okuda, T.

AU - Schwier, E. F.

AU - Iwasawa, H.

AU - Shimada, K.

AU - Natamane, M.

AU - Taniguchi, M.

AU - Rusinov, I. P.

AU - Eremeev, S. V.

AU - Kokh, K. A.

AU - Golyashov, V. A.

AU - Tereshchenko, O. E.

AU - Chulkov, E. V.

AU - Kimura, A.

PY - 2018/5/10

Y1 - 2018/5/10

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AB - We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron spectroscopy as well as density functional theory and GW calculations revealed a wide-band-gap three-dimensional topological insulator phase. The surface electronic spectrum is characterized by the topological surface state (TSS) with Dirac point located above the valence band and Fermi level lying in the band gap. TSS band dispersion and constant energy contour manifest a weak warping effect near the Fermi level along with in-plane and out-of-plane spin polarization along the Γ-K̄ line. We identified four additional states at deeper binding energies with high in-plane spin polarization.

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