Abstract

Si-SiO2-Si3N4 heterostructures obtained by depositing silicon nitride onto a silicon substrate oxidized in dry oxygen were studied by measuring electroluminescence (EL) in the electrolyte-insulator-semiconductor system. The EL spectra display the emission bands typical of a silicon oxide layer and an intense band at 2.7 eV characteristic of the radiative relaxation of excited silylene centers. Since these centers are typical of silicon oxynitride layers, it is concluded that such a layer is formed at the boundary.

Original languageEnglish
Pages (from-to)978-980
Number of pages3
JournalTechnical Physics Letters
Volume28
Issue number12
DOIs
Publication statusPublished - 1 Dec 2002

Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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