Electroluminescence evaluation of the SiO2-Si structures using an electrolyte-SiO2-Si cell

A. P. Baraban, P. P. Konorov, S. A. Bota, J. R. Morante

Research outputpeer-review

4 Citations (Scopus)

Abstract

The use of an Electrolyte-SiO2-Si system allows a detailed control of the electron injection from the electrolyte into SiO2 layer, and makes feasible to reach the electron heating in the conduction band of SiO2 before to take place the irreversible breakdown. The injected and heated electrons enhanced the probability of the SiO2 defect excitation as well as the Si-O bond breaking. Both features give raise to the relaxation processes which are responsible of the electroluminescence characteristics of the oxide. So, the measured electroluminescence spectrum presents straightforward information on the defect types, their nature and possible precursor defect behaviour. Results on silicon oxides obtained from different technological processes and treatments, corroborate the above analysis and show the electro-luminescence of SiO2 as an interesting and powerful method to evaluate the SiO2 properties.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsM.A. Tischler, R.T. Collins, M.L.W. Thewalt, G. Abstreiter
PublisherMaterials Research Society
Pages253-258
Number of pages6
ISBN (Print)1558991948
Publication statusPublished - 1 Dec 1993
EventProceedings of the Symposium on Silicon-Based Optoelectronic Materials - San Francisco, CA, USA
Duration: 12 Apr 199314 Apr 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume298
ISSN (Print)0272-9172

Conference

ConferenceProceedings of the Symposium on Silicon-Based Optoelectronic Materials
CitySan Francisco, CA, USA
Period12/04/9314/04/93

Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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