Electrically active centers formed in silicon during the high-temperature diffusion of boron and aluminum › SPbU Researchers Portal

Electrically active centers formed in silicon during the high-temperature diffusion of boron and aluminum

Research output: Contribution to journal › Article

Nanotechnology Interdisciplinary Centre

DOI

https://doi.org/10.1134/S106378261302019X
Other version

N.A. Sobolev
A.S. Loshachenko
D.S. Poloskin
E.I. Shek

Original language	English
Pages (from-to)	289-291
Journal	Semiconductors
Volume	47
Issue number	2
DOIs	https://doi.org/10.1134/S106378261302019X
State	Published - 2013

ID: 5692185