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Effect of image forces on electrons confined in low-dimensional structures under a magnetic field. / Dostov, V. L.; Zhanguo Wang, Wang.

In: Semiconductor Science and Technology, Vol. 9, No. 10, 004, 01.12.1994, p. 1781-1786.

Research output: Contribution to journal › Article › peer-review

Harvard

Dostov, VL & Zhanguo Wang, W 1994, 'Effect of image forces on electrons confined in low-dimensional structures under a magnetic field', Semiconductor Science and Technology, vol. 9, no. 10, 004, pp. 1781-1786. https://doi.org/10.1088/0268-1242/9/10/004

APA

Dostov, V. L., & Zhanguo Wang, W. (1994). Effect of image forces on electrons confined in low-dimensional structures under a magnetic field. Semiconductor Science and Technology, 9(10), 1781-1786. [004]. https://doi.org/10.1088/0268-1242/9/10/004

Vancouver

Dostov VL, Zhanguo Wang W. Effect of image forces on electrons confined in low-dimensional structures under a magnetic field. Semiconductor Science and Technology. 1994 Dec 1;9(10):1781-1786. 004. https://doi.org/10.1088/0268-1242/9/10/004

Author

Dostov, V. L. ; Zhanguo Wang, Wang. / Effect of image forces on electrons confined in low-dimensional structures under a magnetic field. In: Semiconductor Science and Technology. 1994 ; Vol. 9, No. 10. pp. 1781-1786.

BibTeX

@article{180a5c88b92545eabd900c92b52cb402,
title = "Effect of image forces on electrons confined in low-dimensional structures under a magnetic field",
abstract = "We consider the effect of image forces, arising due to a difference in dielectric permeabilities of the well layer and barrier layers, on the energy spectrum of an electron confined in a rectangular potential well under a magnetic field. Depending on the value and the sign of the dielectric mismatch, image forces can localize electrons near the interfaces of the well or in the well centre and change the direct intersubband gaps into indirect ones. These effects can be controlled by variation of the magnetic field, offering possibilities for exact tuning of electronic devices.",
author = "Dostov, {V. L.} and {Zhanguo Wang}, Wang",
year = "1994",
month = dec,
day = "1",
doi = "10.1088/0268-1242/9/10/004",
language = "English",
volume = "9",
pages = "1781--1786",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "10",

}

RIS

TY - JOUR

T1 - Effect of image forces on electrons confined in low-dimensional structures under a magnetic field

AU - Dostov, V. L.

AU - Zhanguo Wang, Wang

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We consider the effect of image forces, arising due to a difference in dielectric permeabilities of the well layer and barrier layers, on the energy spectrum of an electron confined in a rectangular potential well under a magnetic field. Depending on the value and the sign of the dielectric mismatch, image forces can localize electrons near the interfaces of the well or in the well centre and change the direct intersubband gaps into indirect ones. These effects can be controlled by variation of the magnetic field, offering possibilities for exact tuning of electronic devices.

AB - We consider the effect of image forces, arising due to a difference in dielectric permeabilities of the well layer and barrier layers, on the energy spectrum of an electron confined in a rectangular potential well under a magnetic field. Depending on the value and the sign of the dielectric mismatch, image forces can localize electrons near the interfaces of the well or in the well centre and change the direct intersubband gaps into indirect ones. These effects can be controlled by variation of the magnetic field, offering possibilities for exact tuning of electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=0028524563&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/9/10/004

DO - 10.1088/0268-1242/9/10/004

M3 - Article

AN - SCOPUS:0028524563

VL - 9

SP - 1781

EP - 1786

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 10

M1 - 004

ER -

ID: 39890601