Effect of helium ion beam treatment on wet etching of silicon dioxide

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2 Scopus citations

Abstract

We investigated the effect of helium ion beam treatment on the etching rate of silicon dioxide in a water based solution of hydrofluoric acid. A 460-nm-thick silicon dioxide film on silicon was irradiated with helium ions having energies of 20 keV and 30 keV with ion fluences ranging from 10 14 cm −2 to 10 17 cm −2. The dependence of the etching rate on depth was obtained and compared with the depth distribution of ion-induced defects, which was obtained from numerical simulation. Irradiation with helium ions results in an increase of the etching rate of silicon dioxide. The dependence of the etching rate on the calculated concentration of ion-induced defects is described.

Original languageEnglish
Pages (from-to)94-100
Number of pages7
JournalNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume418
DOIs
StatePublished - 1 Mar 2018

Scopus subject areas

  • Condensed Matter Physics
  • Nuclear and High Energy Physics
  • Instrumentation

Keywords

  • Helium ion microscope
  • Ion beam enhanced etching
  • Radiation-induced defects
  • Silicon dioxide
  • MECHANISM
  • AMORPHOUS SIO2
  • MICROSCOPY
  • NITRIDE
  • DAMAGE
  • RATES
  • IMPLANTATION
  • SIO2-FILMS
  • FOCUSED HELIUM
  • HF

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