Dislocation luminescence and electrical properties of dislocation network produced by silicon direct wafer bonding

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5 Scopus citations

Abstract

Cathodoluminescent (CL) and electrical properties of the dislocation network (DN) produced by direct silicon wafer bonding were investigated. A strong impact of the electric field on the spectrum shape and the intensity of dislocation related CL of the DN built into space charge region (SCR) of Schottky-diode was found. Correlations between the characteristic features of the dependences of CL, dark current, electron beam induced current (EBIC) and capacitance on the applied bias were established. The energy diagram explaining obtained results is proposed.

Original languageEnglish
Pages (from-to)4608-4611
Number of pages4
JournalPhysica B: Condensed Matter
Volume404
Issue number23-24
DOIs
StatePublished - 15 Dec 2009

Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Keywords

  • Cathodoluminescence
  • Dislocation luminescence
  • Dislocation networks

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