Direct observation of the electron spin relaxation induced by nuclei in quantum dots

P. F. Braun, L. Lombez, X. Marie, B. Urbaszek, T. Amand, P. Renucci, D. Lagarde, V. K. Kalevich, K. V. Kavokin, O. Krebs, P. Voisin

Research outputpeer-review

Abstract

We have investigated the electron and hole spin dynamics in p-doped semiconductor InAs/GaAs quantum dots by time resolved photoluminescence. We observe a decay of the average electron spin polarisation down to 1/3 of its initial value with a characteristic time of TΔ ≈ 500ps. We attribute this decay to the hyperfine interaction of the electron spin with randomly orientated nuclear spins. Magnetic field dependent studies reveal that this efficient spin relaxation mechanism can be suppressed by a field in the order of 100mT. In pump-probe like experiments we demonstrate that the resident hole spin, "written"2nd with a first pulse, remains stable long enough to be "read" 15ns later with a second pulse.

Original languageEnglish
Title of host publicationUltrafast Phenomena in Semiconductors and Nanostructure Materials X
Volume6118
DOIs
Publication statusPublished - 23 May 2006
EventUltrafast Phenomena in Semiconductors and Nanostructure Materials X - San Jose, CA
Duration: 23 Jan 200625 Jan 2006

Conference

ConferenceUltrafast Phenomena in Semiconductors and Nanostructure Materials X
CountryUnited States
CitySan Jose, CA
Period23/01/0625/01/06

Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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