Differential Capacitance of a Semiconductor Film

D. E. Tsurikov, A. M. Yafyasov

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A fast scheme for calculating the surface differential capacitance of a semiconductor film with an ohmic contact on the back side is proposed within the phenomenological theory of the space-charge region. The calculation method is considered by the example of a semiconductor with a parabolic dispersion relation (n-Ge). A phenomenon of capacitance-voltage characteristic drop with a decrease in the film thickness is revealed, which is not related to the quantum-confinement effects
Original languageEnglish
Pages (from-to)1292-1296
JournalSemiconductors
Volume44
Issue number10
DOIs
StatePublished - 2010

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