Differential Capacitance of a Semiconductor Film

D. E. Tsurikov, A. M. Yafyasov

Research output: Contribution to journalArticle

1 Scopus citations


A fast scheme for calculating the surface differential capacitance of a semiconductor film with an ohmic contact on the back side is proposed within the phenomenological theory of the space-charge region. The calculation method is considered by the example of a semiconductor with a parabolic dispersion relation (n-Ge). A phenomenon of capacitance-voltage characteristic drop with a decrease in the film thickness is revealed, which is not related to the quantum-confinement effects
Original languageEnglish
Pages (from-to)1292-1296
Issue number10
StatePublished - 2010


Dive into the research topics of 'Differential Capacitance of a Semiconductor Film'. Together they form a unique fingerprint.

Cite this