Dielectric spectroscopy of chalcogenide glasses doped with transition metals

M. S. Gutenev, Yu S. Tver'yanovich, A. P. Krasil'nikova, V. A. Kochemirovskii

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1 Citation (Scopus)

Abstract

The dependence of the dielectric constant on the composition of alloys was determined for the systems: 1) (Sb19Ge22Se59)1-xCox; and 2) [(As2Se3)1-y(Cu2Se)y]1-x[Me$ -2$/ Se3]x, where y = 0.0, 0.1, or 0.23 when Me = Cr and y = 0.3 when Me = Mn. Within the sensitivity of the method employed, the alloys of the system [(As2Se3)0.7(Cu2Se)0.3]-MnSe with 0 ≤ 100x ≤ 1.2, where x is the atomic fraction of Mn are uniform glassy materials. Alloys of the composition 1.2 < 100x ≤ 1.6 contain microcrystalline inclusions based on Mn compounds with a virtually metallic type of conductivity surrounded by an isolated layer whose thickness is on the order of tens of angstroms. When 100x > 1.6, the crystallization process covers a significant part of the volume.

Original languageEnglish
Pages (from-to)52-58
Number of pages7
JournalThe Soviet journal of glass physics and chemistry
Volume15
Issue number1
Publication statusPublished - Nov 1989

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Dielectric spectroscopy
Transition metals
transition metals
Glass
glass
spectroscopy
Crystallization
Chemical analysis
Permittivity
crystallization
permittivity
sensitivity

Scopus subject areas

  • Engineering(all)

Cite this

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title = "Dielectric spectroscopy of chalcogenide glasses doped with transition metals",
abstract = "The dependence of the dielectric constant on the composition of alloys was determined for the systems: 1) (Sb19Ge22Se59)1-xCox; and 2) [(As2Se3)1-y(Cu2Se)y]1-x[Me$ -2$/ Se3]x, where y = 0.0, 0.1, or 0.23 when Me = Cr and y = 0.3 when Me = Mn. Within the sensitivity of the method employed, the alloys of the system [(As2Se3)0.7(Cu2Se)0.3]-MnSe with 0 ≤ 100x ≤ 1.2, where x is the atomic fraction of Mn are uniform glassy materials. Alloys of the composition 1.2 < 100x ≤ 1.6 contain microcrystalline inclusions based on Mn compounds with a virtually metallic type of conductivity surrounded by an isolated layer whose thickness is on the order of tens of angstroms. When 100x > 1.6, the crystallization process covers a significant part of the volume.",
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T1 - Dielectric spectroscopy of chalcogenide glasses doped with transition metals

AU - Gutenev, M. S.

AU - Tver'yanovich, Yu S.

AU - Krasil'nikova, A. P.

AU - Kochemirovskii, V. A.

PY - 1989/11

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N2 - The dependence of the dielectric constant on the composition of alloys was determined for the systems: 1) (Sb19Ge22Se59)1-xCox; and 2) [(As2Se3)1-y(Cu2Se)y]1-x[Me$ -2$/ Se3]x, where y = 0.0, 0.1, or 0.23 when Me = Cr and y = 0.3 when Me = Mn. Within the sensitivity of the method employed, the alloys of the system [(As2Se3)0.7(Cu2Se)0.3]-MnSe with 0 ≤ 100x ≤ 1.2, where x is the atomic fraction of Mn are uniform glassy materials. Alloys of the composition 1.2 < 100x ≤ 1.6 contain microcrystalline inclusions based on Mn compounds with a virtually metallic type of conductivity surrounded by an isolated layer whose thickness is on the order of tens of angstroms. When 100x > 1.6, the crystallization process covers a significant part of the volume.

AB - The dependence of the dielectric constant on the composition of alloys was determined for the systems: 1) (Sb19Ge22Se59)1-xCox; and 2) [(As2Se3)1-y(Cu2Se)y]1-x[Me$ -2$/ Se3]x, where y = 0.0, 0.1, or 0.23 when Me = Cr and y = 0.3 when Me = Mn. Within the sensitivity of the method employed, the alloys of the system [(As2Se3)0.7(Cu2Se)0.3]-MnSe with 0 ≤ 100x ≤ 1.2, where x is the atomic fraction of Mn are uniform glassy materials. Alloys of the composition 1.2 < 100x ≤ 1.6 contain microcrystalline inclusions based on Mn compounds with a virtually metallic type of conductivity surrounded by an isolated layer whose thickness is on the order of tens of angstroms. When 100x > 1.6, the crystallization process covers a significant part of the volume.

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