Abstract

Reectanse spectra of a nanostructure with the 200-nm GaAs quantum well are experimentally studied at application of the uniaxial pressure along the structure layers. A theory of the stress-indused convergence of heavy-hole and light-hole exciton masses is developed. The model is applied to calculation of the polaritonic spectra of nanostructures containing thick GaAs/AlGaAs quantum well. The modication of reectance spectra of the quantum well related to the mass convergence eect is discussed and compared to the experimentally observed one.
Original languageUndefined
Title of host publicationProceedings of 22nd International Symposium "NANOSTRUCTURES: Physics and Technology" (SPb, 2014)
Pages113-114
Publication statusPublished - 2014

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