Reectanse spectra of a nanostructure with the 200-nm GaAs quantum well are experimentally studied at application of the uniaxial pressure along the structure layers. A theory of the stress-indused convergence of heavy-hole and light-hole exciton masses is developed. The model is applied to calculation of the polaritonic spectra of nanostructures containing thick GaAs/AlGaAs quantum well. The modication of reectance spectra of the quantum well related to the mass convergence eect is discussed and compared to the experimentally observed one.
|Title of host publication||Proceedings of 22nd International Symposium "NANOSTRUCTURES: Physics and Technology" (SPb, 2014)|
|Publication status||Published - 2014|