Computer simulation of kinetic processes near a semiconductor surface at a high electric field using the particle method

V. E. Gherm, N. V. Mileshkina, E. A. Semykina

Research output

14 Citations (Scopus)

Abstract

The feasibility of computer simulation of electronic relaxation at a semiconductor-vacuum interface under a strong electric field is demonstrated. A kinetic description of conduction band electrons in a space-charge region layer with a self-consistent electric field under electron-impurity and electron-phonon scattering is developed by the particle method and Monte Carlo procedure. Results for the transient electronic process in a semiconductor field emitter are given.

Original languageEnglish
Article number019
Pages (from-to)1545-1554
Number of pages10
JournalJournal of Physics: Condensed Matter
Volume4
Issue number6
DOIs
Publication statusPublished - 1992

Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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