Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si.
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 23 May 2019|
|Event||19th International Conference on Extended Defects in Semiconductors, EDS 2018 - Thessaloniki|
Duration: 24 Jun 2018 → 29 Jun 2018
Scopus subject areas
- Physics and Astronomy(all)