Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon

M. Trushin, A. Varlamov, A. Loshachenko, O. Vyvenko, M. Kittler

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si.

Original languageEnglish
Article number012005
JournalJournal of Physics: Conference Series
Volume1190
Issue number1
DOIs
StatePublished - 23 May 2019
Event19th International Conference on Extended Defects in Semiconductors, EDS 2018 - Thessaloniki, Greece
Duration: 24 Jun 201829 Jun 2018

Scopus subject areas

  • Physics and Astronomy(all)

Cite this

@article{17be86b0726847b9a67dcf5dcf2ae5ef,
title = "Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon",
abstract = "Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si.",
author = "M. Trushin and A. Varlamov and A. Loshachenko and O. Vyvenko and M. Kittler",
year = "2019",
month = "5",
day = "23",
doi = "10.1088/1742-6596/1190/1/012005",
language = "English",
volume = "1190",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",

}

Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon. / Trushin, M.; Varlamov, A.; Loshachenko, A.; Vyvenko, O.; Kittler, M.

In: Journal of Physics: Conference Series, Vol. 1190, No. 1, 012005, 23.05.2019.

Research output: Contribution to journalConference articleResearchpeer-review

TY - JOUR

T1 - Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon

AU - Trushin, M.

AU - Varlamov, A.

AU - Loshachenko, A.

AU - Vyvenko, O.

AU - Kittler, M.

PY - 2019/5/23

Y1 - 2019/5/23

N2 - Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si.

AB - Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si.

UR - http://www.scopus.com/inward/record.url?scp=85067076050&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1190/1/012005

DO - 10.1088/1742-6596/1190/1/012005

M3 - Conference article

VL - 1190

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012005

ER -