Cathodoluminescence of TiO2 Films Formed by Molecular Layer Deposition

A.P. Baraban, A.A. Selivanov, V.A. Dmitriev, V.E. Drozd, A.V. Drozd

Research output

Abstract

Use of the method of local cathodoluminescence in Si–TiO 2 and Si–SiO 2 –TiO 2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250–400 nm wavelength range in the external part of TiO 2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO 2 layer, and allows its bandgap width (~3.3 eV) to be evaluated for the oxide layers formed by the given technology.
Original languageEnglish
Pages (from-to)255-257
JournalTechnical Physics Letters
Volume45
Issue number3
Publication statusPublished - 26 Mar 2019

Fingerprint

cathodoluminescence
electroforming
absorptivity
luminescence
oxides
defects
wavelengths

Cite this

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abstract = "Use of the method of local cathodoluminescence in Si–TiO 2 and Si–SiO 2 –TiO 2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250–400 nm wavelength range in the external part of TiO 2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO 2 layer, and allows its bandgap width (~3.3 eV) to be evaluated for the oxide layers formed by the given technology.",
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Cathodoluminescence of TiO2 Films Formed by Molecular Layer Deposition. / Baraban, A.P.; Selivanov, A.A.; Dmitriev, V.A.; Drozd, V.E.; Drozd, A.V.

In: Technical Physics Letters, Vol. 45, No. 3, 26.03.2019, p. 255-257.

Research output

TY - JOUR

T1 - Cathodoluminescence of TiO2 Films Formed by Molecular Layer Deposition

AU - Baraban, A.P.

AU - Selivanov, A.A.

AU - Dmitriev, V.A.

AU - Drozd, V.E.

AU - Drozd, A.V.

PY - 2019/3/26

Y1 - 2019/3/26

N2 - Use of the method of local cathodoluminescence in Si–TiO 2 and Si–SiO 2 –TiO 2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250–400 nm wavelength range in the external part of TiO 2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO 2 layer, and allows its bandgap width (~3.3 eV) to be evaluated for the oxide layers formed by the given technology.

AB - Use of the method of local cathodoluminescence in Si–TiO 2 and Si–SiO 2 –TiO 2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250–400 nm wavelength range in the external part of TiO 2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO 2 layer, and allows its bandgap width (~3.3 eV) to be evaluated for the oxide layers formed by the given technology.

UR - https://elibrary.ru/item.asp?id=38688394

UR - https://link.springer.com/article/10.1134/S1063785019030210

M3 - Article

VL - 45

SP - 255

EP - 257

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 3

ER -