Cathodoluminescence of TiO 2 Films Formed by Molecular Layer Deposition

A. P. Baraban, A. A. Selivanov, V. A. Dmitriev, A. V. Drozd, V. E. Drozd

Research outputpeer-review

Abstract

Use of the method of local cathodoluminescence in Si-TiO2 and Si-SiO2-TiO2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250-400 nm wavelength range in the external part of TiO2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO2 layer, and allows its bandgap width (3.3 eV) to be evaluated for the oxide layers formed by the given technology.

Original languageEnglish
Pages (from-to)256-258
Number of pages3
JournalTechnical Physics Letters
Volume45
Issue number3
DOIs
Publication statusPublished - 1 Mar 2019

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cathodoluminescence
electroforming
absorptivity
luminescence
oxides
defects
wavelengths

Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

@article{40e1ed5cf7d04d5795af1e6a6fad447f,
title = "Cathodoluminescence of TiO 2 Films Formed by Molecular Layer Deposition",
abstract = "Use of the method of local cathodoluminescence in Si-TiO2 and Si-SiO2-TiO2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250-400 nm wavelength range in the external part of TiO2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO2 layer, and allows its bandgap width (3.3 eV) to be evaluated for the oxide layers formed by the given technology.",
author = "Baraban, {A. P.} and Selivanov, {A. A.} and Dmitriev, {V. A.} and Drozd, {A. V.} and Drozd, {V. E.}",
year = "2019",
month = "3",
day = "1",
doi = "10.1134/S1063785019030210",
language = "English",
volume = "45",
pages = "256--258",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "МАИК {"}Наука/Интерпериодика{"}",
number = "3",

}

Cathodoluminescence of TiO 2 Films Formed by Molecular Layer Deposition. / Baraban, A. P.; Selivanov, A. A.; Dmitriev, V. A.; Drozd, A. V.; Drozd, V. E.

In: Technical Physics Letters, Vol. 45, No. 3, 01.03.2019, p. 256-258.

Research outputpeer-review

TY - JOUR

T1 - Cathodoluminescence of TiO 2 Films Formed by Molecular Layer Deposition

AU - Baraban, A. P.

AU - Selivanov, A. A.

AU - Dmitriev, V. A.

AU - Drozd, A. V.

AU - Drozd, V. E.

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Use of the method of local cathodoluminescence in Si-TiO2 and Si-SiO2-TiO2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250-400 nm wavelength range in the external part of TiO2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO2 layer, and allows its bandgap width (3.3 eV) to be evaluated for the oxide layers formed by the given technology.

AB - Use of the method of local cathodoluminescence in Si-TiO2 and Si-SiO2-TiO2 structures helps to elucidate the nature of centers influencing the operation of memristors. These measurements showed that electroforming leads to the appearance of luminescence in a 250-400 nm wavelength range in the external part of TiO2 layer characterized by high concentration of defects. This observation leads to a conclusion that a sharp interface is formed between dielectric layers of the structure, provides estimation of the absorption coefficient of TiO2 layer, and allows its bandgap width (3.3 eV) to be evaluated for the oxide layers formed by the given technology.

UR - http://www.scopus.com/inward/record.url?scp=85065302999&partnerID=8YFLogxK

U2 - 10.1134/S1063785019030210

DO - 10.1134/S1063785019030210

M3 - Article

VL - 45

SP - 256

EP - 258

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 3

ER -