Carrier spin dynamics in GaAs/AlGaAs quantum wells with a laterally localizing electric potential

R.V. Cherbunin, M.S. Kuznetsova, I.Y. Gerlovin, I.V. Ignatiev, Y.K. Dolgikh, Y.P. Efimov, S.A. Eliseev, V.V. Petrov, S.V. Poltavtsev, A.V. Larionov, A.I. Il'In

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Abstract

The spin orientation dynamics in a GaAs quantum well with a laterally nonuniform electric potential generated by a mosaic electrode deposited on the surface of the sample has been investigated using the photoinduced magneto-optical Kerr effect. It has been found that the application of a negative potential higher than 1 V to the electrode leads to more than a hundredfold increase in the spin polarization lifetime in the sample under study. It is concluded that so strong slowing down of the relaxation is caused by a combined action of two effects, namely, the spatial separation of electron and hole, which reduces the radiative recombination rate of electron-hole pair, and the localization of electron, which is accompanied by the suppression of spin relaxation processes caused by electron motion.
Original languageEnglish
Pages (from-to)837-840
JournalPhysics of the Solid State
Volume51
Issue number4
DOIs
StatePublished - 2009

Keywords

  • GaAs quantum well
  • mosaic electrode
  • spin life time
  • spin relaxation processes
  • Kerr effect

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