Breakdown of the Static Approximation for Free Carrier Screening of Excitons in Monolayer Semiconductors

Mikhail M. Glazov, Alexey Chernikov

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The authors address the problem of free carrier screening of exciton states in two-dimensional monolayer semiconductors. Basic theoretical considerations are presented concerning the applicability of the commonly used static approximation of the screening effect and the implications are discussed. The authors show that the low-frequency models leads to a major overestimation of the free carrier response and are inadequate to describe the screening of strongly bound excitons in monolayer materials. The presented arguments are consistent with existing high-level many-body theories and transparently illustrate the underlying physics.

Original languageEnglish
Article number1800216
Number of pages10
JournalPhysica Status Solidi (B) Basic Research
Volume255
Issue number12
DOIs
StatePublished - Dec 2018

Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Keywords

  • Excitons
  • Free-carrier screening
  • Transition-metal dichalcogenides
  • Two-dimensional semiconductors
  • two-dimensional semiconductors
  • free-carrier screening
  • excitons
  • transition-metal dichalcogenides
  • ELECTRONIC-PROPERTIES
  • TRIONS

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