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Boron-Doped Graphene Nanoribbons : Electronic Structure and Raman Fingerprint. / Senkoyskiy, Boris V.; Usachov, Dmitry Yu.; Fedorov, Alexander V.; Marangoni, Tomas; Haberer, Danny; Tresca, Cesare; Profeta, Gianni; Caciuc, Vasile; Tsukamoto, Shigeru; Atodiresei, Nicolae; Ehlen, Niels; Chen, Chaoyu; Avila, Jose; Asensio, Maria C.; Varykhalov, Andrei Yu.; Nefedov, Alexei; Woell, Christof; Kim, Timur K.; Hoesch, Moritz; Fischer, Felix R.; Grueneis, Alexander.

In: ACS Nano, Vol. 12, No. 8, 28.08.2018, p. 7571-7582.

Research output: Contribution to journalArticlepeer-review

Harvard

Senkoyskiy, BV, Usachov, DY, Fedorov, AV, Marangoni, T, Haberer, D, Tresca, C, Profeta, G, Caciuc, V, Tsukamoto, S, Atodiresei, N, Ehlen, N, Chen, C, Avila, J, Asensio, MC, Varykhalov, AY, Nefedov, A, Woell, C, Kim, TK, Hoesch, M, Fischer, FR & Grueneis, A 2018, 'Boron-Doped Graphene Nanoribbons: Electronic Structure and Raman Fingerprint', ACS Nano, vol. 12, no. 8, pp. 7571-7582. https://doi.org/10.1021/acsnano.8b04125

APA

Senkoyskiy, B. V., Usachov, D. Y., Fedorov, A. V., Marangoni, T., Haberer, D., Tresca, C., Profeta, G., Caciuc, V., Tsukamoto, S., Atodiresei, N., Ehlen, N., Chen, C., Avila, J., Asensio, M. C., Varykhalov, A. Y., Nefedov, A., Woell, C., Kim, T. K., Hoesch, M., ... Grueneis, A. (2018). Boron-Doped Graphene Nanoribbons: Electronic Structure and Raman Fingerprint. ACS Nano, 12(8), 7571-7582. https://doi.org/10.1021/acsnano.8b04125

Vancouver

Senkoyskiy BV, Usachov DY, Fedorov AV, Marangoni T, Haberer D, Tresca C et al. Boron-Doped Graphene Nanoribbons: Electronic Structure and Raman Fingerprint. ACS Nano. 2018 Aug 28;12(8):7571-7582. https://doi.org/10.1021/acsnano.8b04125

Author

Senkoyskiy, Boris V. ; Usachov, Dmitry Yu. ; Fedorov, Alexander V. ; Marangoni, Tomas ; Haberer, Danny ; Tresca, Cesare ; Profeta, Gianni ; Caciuc, Vasile ; Tsukamoto, Shigeru ; Atodiresei, Nicolae ; Ehlen, Niels ; Chen, Chaoyu ; Avila, Jose ; Asensio, Maria C. ; Varykhalov, Andrei Yu. ; Nefedov, Alexei ; Woell, Christof ; Kim, Timur K. ; Hoesch, Moritz ; Fischer, Felix R. ; Grueneis, Alexander. / Boron-Doped Graphene Nanoribbons : Electronic Structure and Raman Fingerprint. In: ACS Nano. 2018 ; Vol. 12, No. 8. pp. 7571-7582.

BibTeX

@article{e612feb49b83440eae7e68797df65c53,
title = "Boron-Doped Graphene Nanoribbons: Electronic Structure and Raman Fingerprint",
abstract = "We investigate the electronic and vibrational properties of bottom-up synthesized aligned armchair graphene nanoribbons of N = 7 carbon atoms width periodically doped by substitutional boron atoms (B-7AGNRs). Using angle-resolved photoemission spectroscopy and density functional theory calculations, we find that the dopant-derived valence and conduction band states are notably hybridized with electronic states of Au substrate and spread in energy. The interaction with the substrate leaves the bands with pure carbon character rather unperturbed. This results in an identical effective mass of approximate to 0.2 m(0) for the next-highest valence band compared with pristine 7AGNRs. We probe the phonons of B-7AGNRs by ultrahigh-vacuum (UHV) Raman spectroscopy and reveal the existence of characteristic splitting and red shifts in Raman modes due to the presence of substitutional boron atoms. Comparing the Raman spectra for three visible lasers (red, green, and blue), we find that interaction with gold suppresses the Raman signal from B-7AGNRs and the energy of the green laser (2.33 eV) is closer to the resonant E-22 transition. The hybridized electronic structure of the B-7AGNR-Au interface is expected to improve electrical characteristics of contacts between graphene nanoribbon and Au. The Raman fingerprint allows the easy identification of B-7AGNRs, which is particularly useful for device fabrication.",
keywords = "graphene nanoribbons, boron doping, electronic structure, ARPES, Raman, substrate interaction, ON-SURFACE SYNTHESIS, BOTTOM-UP FABRICATION, BAND-GAP, CRYSTALLITE SIZE, SPECTROSCOPY, ARMCHAIR, HETEROJUNCTIONS, SEMICONDUCTORS, SCATTERING, ENERGY",
author = "Senkoyskiy, {Boris V.} and Usachov, {Dmitry Yu.} and Fedorov, {Alexander V.} and Tomas Marangoni and Danny Haberer and Cesare Tresca and Gianni Profeta and Vasile Caciuc and Shigeru Tsukamoto and Nicolae Atodiresei and Niels Ehlen and Chaoyu Chen and Jose Avila and Asensio, {Maria C.} and Varykhalov, {Andrei Yu.} and Alexei Nefedov and Christof Woell and Kim, {Timur K.} and Moritz Hoesch and Fischer, {Felix R.} and Alexander Grueneis",
year = "2018",
month = aug,
day = "28",
doi = "10.1021/acsnano.8b04125",
language = "Английский",
volume = "12",
pages = "7571--7582",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "8",

}

RIS

TY - JOUR

T1 - Boron-Doped Graphene Nanoribbons

T2 - Electronic Structure and Raman Fingerprint

AU - Senkoyskiy, Boris V.

AU - Usachov, Dmitry Yu.

AU - Fedorov, Alexander V.

AU - Marangoni, Tomas

AU - Haberer, Danny

AU - Tresca, Cesare

AU - Profeta, Gianni

AU - Caciuc, Vasile

AU - Tsukamoto, Shigeru

AU - Atodiresei, Nicolae

AU - Ehlen, Niels

AU - Chen, Chaoyu

AU - Avila, Jose

AU - Asensio, Maria C.

AU - Varykhalov, Andrei Yu.

AU - Nefedov, Alexei

AU - Woell, Christof

AU - Kim, Timur K.

AU - Hoesch, Moritz

AU - Fischer, Felix R.

AU - Grueneis, Alexander

PY - 2018/8/28

Y1 - 2018/8/28

N2 - We investigate the electronic and vibrational properties of bottom-up synthesized aligned armchair graphene nanoribbons of N = 7 carbon atoms width periodically doped by substitutional boron atoms (B-7AGNRs). Using angle-resolved photoemission spectroscopy and density functional theory calculations, we find that the dopant-derived valence and conduction band states are notably hybridized with electronic states of Au substrate and spread in energy. The interaction with the substrate leaves the bands with pure carbon character rather unperturbed. This results in an identical effective mass of approximate to 0.2 m(0) for the next-highest valence band compared with pristine 7AGNRs. We probe the phonons of B-7AGNRs by ultrahigh-vacuum (UHV) Raman spectroscopy and reveal the existence of characteristic splitting and red shifts in Raman modes due to the presence of substitutional boron atoms. Comparing the Raman spectra for three visible lasers (red, green, and blue), we find that interaction with gold suppresses the Raman signal from B-7AGNRs and the energy of the green laser (2.33 eV) is closer to the resonant E-22 transition. The hybridized electronic structure of the B-7AGNR-Au interface is expected to improve electrical characteristics of contacts between graphene nanoribbon and Au. The Raman fingerprint allows the easy identification of B-7AGNRs, which is particularly useful for device fabrication.

AB - We investigate the electronic and vibrational properties of bottom-up synthesized aligned armchair graphene nanoribbons of N = 7 carbon atoms width periodically doped by substitutional boron atoms (B-7AGNRs). Using angle-resolved photoemission spectroscopy and density functional theory calculations, we find that the dopant-derived valence and conduction band states are notably hybridized with electronic states of Au substrate and spread in energy. The interaction with the substrate leaves the bands with pure carbon character rather unperturbed. This results in an identical effective mass of approximate to 0.2 m(0) for the next-highest valence band compared with pristine 7AGNRs. We probe the phonons of B-7AGNRs by ultrahigh-vacuum (UHV) Raman spectroscopy and reveal the existence of characteristic splitting and red shifts in Raman modes due to the presence of substitutional boron atoms. Comparing the Raman spectra for three visible lasers (red, green, and blue), we find that interaction with gold suppresses the Raman signal from B-7AGNRs and the energy of the green laser (2.33 eV) is closer to the resonant E-22 transition. The hybridized electronic structure of the B-7AGNR-Au interface is expected to improve electrical characteristics of contacts between graphene nanoribbon and Au. The Raman fingerprint allows the easy identification of B-7AGNRs, which is particularly useful for device fabrication.

KW - graphene nanoribbons

KW - boron doping

KW - electronic structure

KW - ARPES

KW - Raman

KW - substrate interaction

KW - ON-SURFACE SYNTHESIS

KW - BOTTOM-UP FABRICATION

KW - BAND-GAP

KW - CRYSTALLITE SIZE

KW - SPECTROSCOPY

KW - ARMCHAIR

KW - HETEROJUNCTIONS

KW - SEMICONDUCTORS

KW - SCATTERING

KW - ENERGY

UR - http://www.scopus.com/inward/record.url?scp=85049970082&partnerID=8YFLogxK

UR - http://www.mendeley.com/research/borondoped-graphene-nanoribbons-electronic-structure-raman-fingerprint

U2 - 10.1021/acsnano.8b04125

DO - 10.1021/acsnano.8b04125

M3 - статья

VL - 12

SP - 7571

EP - 7582

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 8

ER -

ID: 33794311