Bidirectional surface photovoltage on a topological insulator

T. Yoshikawa, K. Sumida, Y. Ishida, J. Chen, M. Nurmamat, K. Akiba, A. Miyake, M. Tokunaga, K.A. Kokh, O. E. Tereshchenko, S. Shin, A. Kimura

Research output

Abstract

Controlled extraction of spin-polarized currents from the surface of topological insulators (TIs) would be an important step to use TIs as spin-electronic device materials. One way is to utilize the surface photovoltage (SPV) effect, by which the surface current may flow upon irradiation of light. To date, unipolar SPV has been observed on TIs, while the realization of ambipolar SPV is crucial for taking control over the direction of the flow. By using time-resolved photoemission, we demonstrate the ambipolar SPV realized on the TI Bi2Te3. The topological surface states showed downward and upward photovoltaic shifts for the n- and p-type samples, respectively. We also discerned the photogenerated carriers accumulated in the surface states for >4μs. We provide the keys besides the in-gap Fermi level to engineer the SPV on TIs.

Original languageEnglish
Article number165311
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume100
Issue number16
DOIs
Publication statusPublished - 2019

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photovoltages
insulators
Surface states
Photoemission
Fermi level
Irradiation
engineers
Engineers
photoelectric emission
irradiation
shift

Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Yoshikawa, T., Sumida, K., Ishida, Y., Chen, J., Nurmamat, M., Akiba, K., ... Kimura, A. (2019). Bidirectional surface photovoltage on a topological insulator. Physical Review B - Condensed Matter and Materials Physics, 100(16), [165311 ]. https://doi.org/10.1103/PhysRevB.100.165311
Yoshikawa, T. ; Sumida, K. ; Ishida, Y. ; Chen, J. ; Nurmamat, M. ; Akiba, K. ; Miyake, A. ; Tokunaga, M. ; Kokh, K.A. ; Tereshchenko, O. E. ; Shin, S. ; Kimura, A. / Bidirectional surface photovoltage on a topological insulator. In: Physical Review B - Condensed Matter and Materials Physics. 2019 ; Vol. 100, No. 16.
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abstract = "Controlled extraction of spin-polarized currents from the surface of topological insulators (TIs) would be an important step to use TIs as spin-electronic device materials. One way is to utilize the surface photovoltage (SPV) effect, by which the surface current may flow upon irradiation of light. To date, unipolar SPV has been observed on TIs, while the realization of ambipolar SPV is crucial for taking control over the direction of the flow. By using time-resolved photoemission, we demonstrate the ambipolar SPV realized on the TI Bi2Te3. The topological surface states showed downward and upward photovoltaic shifts for the n- and p-type samples, respectively. We also discerned the photogenerated carriers accumulated in the surface states for >4μs. We provide the keys besides the in-gap Fermi level to engineer the SPV on TIs.",
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Yoshikawa, T, Sumida, K, Ishida, Y, Chen, J, Nurmamat, M, Akiba, K, Miyake, A, Tokunaga, M, Kokh, KA, Tereshchenko, OE, Shin, S & Kimura, A 2019, 'Bidirectional surface photovoltage on a topological insulator', Physical Review B - Condensed Matter and Materials Physics, vol. 100, no. 16, 165311 . https://doi.org/10.1103/PhysRevB.100.165311

Bidirectional surface photovoltage on a topological insulator. / Yoshikawa, T.; Sumida, K.; Ishida, Y.; Chen, J.; Nurmamat, M.; Akiba, K.; Miyake, A. ; Tokunaga, M. ; Kokh, K.A.; Tereshchenko, O. E. ; Shin, S.; Kimura, A.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 100, No. 16, 165311 , 2019.

Research output

TY - JOUR

T1 - Bidirectional surface photovoltage on a topological insulator

AU - Yoshikawa, T.

AU - Sumida, K.

AU - Ishida, Y.

AU - Chen, J.

AU - Nurmamat, M.

AU - Akiba, K.

AU - Miyake, A.

AU - Tokunaga, M.

AU - Kokh, K.A.

AU - Tereshchenko, O. E.

AU - Shin, S.

AU - Kimura, A.

PY - 2019

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AB - Controlled extraction of spin-polarized currents from the surface of topological insulators (TIs) would be an important step to use TIs as spin-electronic device materials. One way is to utilize the surface photovoltage (SPV) effect, by which the surface current may flow upon irradiation of light. To date, unipolar SPV has been observed on TIs, while the realization of ambipolar SPV is crucial for taking control over the direction of the flow. By using time-resolved photoemission, we demonstrate the ambipolar SPV realized on the TI Bi2Te3. The topological surface states showed downward and upward photovoltaic shifts for the n- and p-type samples, respectively. We also discerned the photogenerated carriers accumulated in the surface states for >4μs. We provide the keys besides the in-gap Fermi level to engineer the SPV on TIs.

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