ATOMIC LAYER DEPOSITION OF TIN DIOXIDE NANOFILMS: A REVIEW

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30 Citations (Scopus)

Abstract

Due to unique electrical, optical, chemical and magnetic properties of tin dioxide, SnO2 thin films attract enormous attention as a potential material for gas sensor devices, transparent conducting oxides for microelectronics, lithium-ion batteries, supercapasitors, spintronic devices, solar cells, etc. Thin films possessing a wide variety of properties determined by thickness, morphology, structural properties, and film composition are necessary to satisfy the requirements of such a wide range of applications. At present, there are many approaches for SnO2 thin films manufacturing, the Atomic Layer Deposition (ALD) technology is considered to be the most promising and suitable method to produce thin film with a set of certain characteristics. In this paper, we present an overview of achievements in SnO2 ALD thin film preparation. The special attention is given to the selection of precursors, deposition conditions, and deposited films properties.
Original languageEnglish
Pages (from-to)262-275
JournalReviews on Advanced Materials Science
Volume40
Publication statusPublished - 2015

Fingerprint

Tin
Atomic layer deposition
atomic layer epitaxy
tin
Thin films
thin films
Tin dioxide
Film preparation
Magnetoelectronics
Chemical sensors
dioxides
microelectronics
Microelectronics
chemical properties
Oxides
Chemical properties
electric batteries
Structural properties
Magnetic properties
Solar cells

Cite this

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title = "ATOMIC LAYER DEPOSITION OF TIN DIOXIDE NANOFILMS: A REVIEW",
abstract = "Due to unique electrical, optical, chemical and magnetic properties of tin dioxide, SnO2 thin films attract enormous attention as a potential material for gas sensor devices, transparent conducting oxides for microelectronics, lithium-ion batteries, supercapasitors, spintronic devices, solar cells, etc. Thin films possessing a wide variety of properties determined by thickness, morphology, structural properties, and film composition are necessary to satisfy the requirements of such a wide range of applications. At present, there are many approaches for SnO2 thin films manufacturing, the Atomic Layer Deposition (ALD) technology is considered to be the most promising and suitable method to produce thin film with a set of certain characteristics. In this paper, we present an overview of achievements in SnO2 ALD thin film preparation. The special attention is given to the selection of precursors, deposition conditions, and deposited films properties.",
keywords = "ALD, tin oxide, SnO2",
author = "D.V. Nazarov and N.P. Bobrysheva and O.M. Osmolovskaya and M.G. Osmolovsky and V.M. Smirnov",
year = "2015",
language = "English",
volume = "40",
pages = "262--275",
journal = "Reviews on Advanced Materials Science",
issn = "1606-5131",
publisher = "Институт проблем машиноведения РАН",

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TY - JOUR

T1 - ATOMIC LAYER DEPOSITION OF TIN DIOXIDE NANOFILMS: A REVIEW

AU - Nazarov, D.V.

AU - Bobrysheva, N.P.

AU - Osmolovskaya, O.M.

AU - Osmolovsky, M.G.

AU - Smirnov, V.M.

PY - 2015

Y1 - 2015

N2 - Due to unique electrical, optical, chemical and magnetic properties of tin dioxide, SnO2 thin films attract enormous attention as a potential material for gas sensor devices, transparent conducting oxides for microelectronics, lithium-ion batteries, supercapasitors, spintronic devices, solar cells, etc. Thin films possessing a wide variety of properties determined by thickness, morphology, structural properties, and film composition are necessary to satisfy the requirements of such a wide range of applications. At present, there are many approaches for SnO2 thin films manufacturing, the Atomic Layer Deposition (ALD) technology is considered to be the most promising and suitable method to produce thin film with a set of certain characteristics. In this paper, we present an overview of achievements in SnO2 ALD thin film preparation. The special attention is given to the selection of precursors, deposition conditions, and deposited films properties.

AB - Due to unique electrical, optical, chemical and magnetic properties of tin dioxide, SnO2 thin films attract enormous attention as a potential material for gas sensor devices, transparent conducting oxides for microelectronics, lithium-ion batteries, supercapasitors, spintronic devices, solar cells, etc. Thin films possessing a wide variety of properties determined by thickness, morphology, structural properties, and film composition are necessary to satisfy the requirements of such a wide range of applications. At present, there are many approaches for SnO2 thin films manufacturing, the Atomic Layer Deposition (ALD) technology is considered to be the most promising and suitable method to produce thin film with a set of certain characteristics. In this paper, we present an overview of achievements in SnO2 ALD thin film preparation. The special attention is given to the selection of precursors, deposition conditions, and deposited films properties.

KW - ALD

KW - tin oxide

KW - SnO2

M3 - Literature review

VL - 40

SP - 262

EP - 275

JO - Reviews on Advanced Materials Science

JF - Reviews on Advanced Materials Science

SN - 1606-5131

ER -