Analysis of Oxygen and Nitrogen Redistribution at Interfaces of HfO2 with Laminate TiN/TiAl/TiN Electrodes

Aleksei S. Konashuk, Elena O. Filatova, Sergei S. Sakhonenkov, Nadiia M. Kolomiiets, Valeri V. Afanas’ev

Research output

Abstract

Physicochemical nature of the change in the effective work function (EWF) of aluminum doped TiN (using TiN/TiAl/TiN laminate structure) was studied by X-ray photoelectron spectroscopy with high kinetic energies (HAXPES). Comparative analysis of Si/SiO2/HfO2/TiN-TiAl-TiN and Si/SiO2/HfO2/TiN stacks reveals identical composition of the HfO2/TiN interfaces in both stacks. It was established that EWF decrease for TiN/TiAl/TiN laminate electrode with respect to the “normal” value for TiN is related to redistribution of light N and O atoms in the bulk of TiN/TiAl/TiN instead of frequently supposed Al diffusion and formation of HfAlOx mixed oxide at HfO2/TiN interface. Formation of nonstoichiometric TiNx, metallic Ti and Al, and AlN in the bulk of TiN/TiAl/TiN was revealed by HAXPES.
Original languageEnglish
Pages (from-to)16171–16176
Number of pages6
JournalJournal of Physical Chemistry C
Volume124
Issue number29
DOIs
Publication statusPublished - Jun 2020

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