Aluminum nitride transition layer for power electronics applications grown by plasma-enhanced atomic layer deposition. / Seppänen, Heli; Kim, Iurii; Etula, Jarkko; Ubyivovk, Evgeniy; Bouravleuv, Alexei; Lipsanen, Harri.
In: Materials, Vol. 12, No. 3, 406, 28.01.2019.Research output: Contribution to journal › Article › peer-review
}
TY - JOUR
T1 - Aluminum nitride transition layer for power electronics applications grown by plasma-enhanced atomic layer deposition
AU - Seppänen, Heli
AU - Kim, Iurii
AU - Etula, Jarkko
AU - Ubyivovk, Evgeniy
AU - Bouravleuv, Alexei
AU - Lipsanen, Harri
PY - 2019/1/28
Y1 - 2019/1/28
N2 - Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.
AB - Aluminum nitride (AlN) films have been grown using novel technological approaches based on plasma-enhanced atomic layer deposition (PEALD) and in situ atomic layer annealing (ALA). The growth of AlN layers was carried out on Si and Si<111> substrates at low growth temperature. The investigation of crystalline quality of samples demonstrated that PEALD grown layers were polycrystalline, but ALA treatment improved their crystallinity. A thick polycrystalline AlN layer was successfully regrown by metal-organic chemical vapor deposition (MOCVD) on an AlN PEALD template. It opens up the new possibilities for the formation of nucleation layers with improved quality for subsequent growth of semiconductor nitride compounds.
KW - ALA
KW - ALD
KW - AlN
KW - Buffer layers
KW - MOCVD
KW - Regrowth
KW - Transition layer
KW - buffer layers
KW - regrowth
KW - ALN
KW - transition layer
KW - THREADING DISLOCATION DENSITY
KW - FILMS
KW - GAN
UR - http://www.scopus.com/inward/record.url?scp=85060971674&partnerID=8YFLogxK
U2 - 10.3390/ma12030406
DO - 10.3390/ma12030406
M3 - Article
AN - SCOPUS:85060971674
VL - 12
JO - Materials
JF - Materials
SN - 1996-1944
IS - 3
M1 - 406
ER -
ID: 38366794